Preparation of (Ba, Sr)TiO_3 Thin Films by Chemical Vapor Deposition Using Liquid Sources

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1994-10-15

著者

• Makita T

  Semiconductor Research Laboratory Mitsubishi Electric Corporation

• Makita Tetsuro

  Semiconductor Research Laboratory Mitsubishi Electric Corporation

• Ono K

  Department Of Applied Chemistry The University Of Tokyo

• Ono K

  Advanced Technology R&d Center Mitsubishi Electric Corporation:(present Address)department Of Ae

• Ono K

  Univ. California Ca Usa

• KAWAHARA Toshio

  Department of Materials Science and Engineering, National Defense Academy

• Matsui Yasushi

  Electronics Research Laboratory Corporate Research & Development Matsushita Electronics Corporat

• KAWAHARA Takaaki

  Semiconductor Leading Edge Technologies, Inc.

• YAMAMUKA Mikio

  Semiconductor Research Laboratory, Mitsubishi Electric Corporation

• YUUKI Akimasa

  Semiconductor Research Laboratory, Mitsubishi Electric Corporation

• ONO Kouichi

  Semiconductor Research Laboratory, Mitsubishi Electric Corporation

• TSUTAHARA Koichiro

  Kita-Itami Works, Mitsubishi Electric Corporation

• MATSUI Yasuji

  Semiconductor Research Laboratory, Mitsubishi Electric Corporation

• Muto Y

  The Institute For Materials Research Tohoku University

• Yuuki A

  Semiconductor Research Laboratory Mitsubishi Electric Corporation

• Yuuki Akimasa

  Product Development Laboratory Mitsubishi Electric Corporation

• Yuuki Akimasa

  Semiconductor Research Laboratory Mitsubishi Electric Corporation

• Yamamuka M

  Mitsubishi Electric Corp. Hyogo Jpn

• Kawahara T

  Semiconductor Leading Edge Technol. Inc. Tsukuba-shi Jpn

• Matsui Yasuji

  Semiconductor Research Laboratory Mitsubishi Electric Corporation

• Kawahara T

  Faculty Of Technology Tokyo University Of Agriculture And Technology

• Kawahara Takaaki

  Semiconductor Leading Edge Technologies Inc.

• Tsutahara Koichiro

  Kita-itami Works Mitsubishi Electric Corporation

• Ono Kouichi

  Semiconductor Research Laboratory Mitsubishi Electric Corporation

• KAWAHARA Takaaki

  Semiconductor Leading Edge Technologies

関連論文

• 2.ドライエッチングのモデルとその実験検証(ドライエッチングの科学と技術の新局面)
• 4.高誘電率(High-k)材料のドライエッチング(ドライエッチングの科学と技術の新局面)
• Dielectric Properties of (Ba,Sr)TiO_3 Thin Films Deposited by RF Sputtering
• Highly Uniform Si-Doped GaAs Epitaxial Layers Grown by MBE Using a TEG, Arsenic, and Silicon System
• Substrate Temperature Dependence of Carbon Incorporation into GaAs Grown by MBE Using Triethylgallium and As_4
• Highly Uniform, High-Purity GaAs Epitaxial Layer Grown by MBE Using Triethylgallium and Arsenic : Semiconductors and Semiconductor Devices
• 1.はじめに(ドライエッチングの科学と技術の新局面)
• 8.おわりに(ドライエッチングの科学と技術の新局面)
• 最近の展望 マイクロプラズマスラスター
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• Numerical Analysis of the Electromagnetic Fields in a Microwave Plasma Source Excited by Azimuthally Symmetric Surface Waves
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• プラズマチャージングダメージがMOSFETのRandom Telegraph Noise特性に及ぼす影響(プロセス科学と新プロセス技術)

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