最近の展望 マイクロプラズマスラスター
スポンサーリンク
概要
著者
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斧 高一
京都大学大学院工学研究科
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斧 高一
京大 大学院工学研究科
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ONO Katsuji
Fujitsu Laboratories Ltd.
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Ono K
Department Of Applied Chemistry The University Of Tokyo
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Ono K
Advanced Technology R&d Center Mitsubishi Electric Corporation:(present Address)department Of Ae
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Ono K
Univ. California Ca Usa
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Ono K
The Faculty Of Engineering Ehime University
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鷹尾 祥典
京都大学
関連論文
- 2.ドライエッチングのモデルとその実験検証(ドライエッチングの科学と技術の新局面)
- 4.高誘電率(High-k)材料のドライエッチング(ドライエッチングの科学と技術の新局面)
- Highly Uniform Si-Doped GaAs Epitaxial Layers Grown by MBE Using a TEG, Arsenic, and Silicon System
- Substrate Temperature Dependence of Carbon Incorporation into GaAs Grown by MBE Using Triethylgallium and As_4
- Highly Uniform, High-Purity GaAs Epitaxial Layer Grown by MBE Using Triethylgallium and Arsenic : Semiconductors and Semiconductor Devices
- 1.はじめに(ドライエッチングの科学と技術の新局面)
- 8.おわりに(ドライエッチングの科学と技術の新局面)
- 最近の展望 マイクロプラズマスラスター
- 第58回気体エレクトロニクス会議(58th Gaseous Electronics Conference)
- An Atomic Scale Model of Multilayer Surface Reactions and the Feature Profile Evolution during Plasma Etching
- マイクロプラズマスラスターの研究開発 (特集 宇宙高温工学)
- 誘導結合型フルオロカｰボンプラズマを用いた高誘電率HfO_2薄膜のエッチング
- 半導体プラズマプロセスシミュレーションとTCAD
- プラズマCVDと溶媒処理を用いたフルオロカーボン系多孔質構造Low-K薄膜の作成
- Numerical Analysis of the Electromagnetic Fields in a Microwave Plasma Source Excited by Azimuthally Symmetric Surface Waves
- Si ドライエッチング技術
- 3.1 プラズマエッチング : 3. プラズマプロセス装置におけるプラズマ・表面相互作用(プラズマ・表面相互作用) : 多様なPSI現象
- 宇宙マイクロ・ナノ工学とシリコンナノサテライト連携研究計画 (特集 宇宙高温工学)
- 先端プラズマエッチングプロセスのモデリングと体系化
- ULSIデバイス作製プロセスにおけるプラズマ-固体表面相互作用
- X-Ray Photoelectron Spectroscopy Study of Hetero-Interface between Manganese Pnictide and Mn-Zn Ferrite
- Epitaxial Growth of InAs on Single-Crystalline Mn-Zn Ferrite Substrates
- 27aW-12 Electronic structures of the CDW phase of in linear chains on Si(111)
- Thermal Desorption Spectroscopy of (Ba, Sr)TiO_3 Thin Films Prepared by Chemical Vapor Deposition
- Preparation of (Ba, Sr)TiO_3 Thin Films by Chemical Vapor Deposition Using Liquid Sources
- Step Coverage and Electrical Properties of (Ba, Sr)TiO_3 Films Prepared by Liquid Source Chemical Vapor Deposition Using TiO(DPM)_2 ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Effect of Impurity at SiO_2/Si Interface on 2D Hole Gas
- Generalized Grazing Incidence-Angle X-Ray Diffraction Studies on InAs Quantum Dots on Si(100) Substrates
- The Effect of Surface Cleaning by Wet Treatments and Ultra High Vacuum Annealing for Ohmic Contact Formation of P-Type GaN
- Spin State Analysis of Epitaxial Mn Compound Films Using High Resolution X-Ray Fluorescence
- Chemical States of Piled-up Phosphorus and Arsenic Atoms at the SiO2/Si Interface (Proceedings of the Second International Conference on SRMS(Synchrotron Radiation in Materials Science)(2))
- Simulation of 2-Dimensional Hole Gas for PMOS Devices with Phosphorus Pile-Up
- Characterization of Phosphorus Pile-Up at the SiO_2/Si Interface
- In Situ Fourier Transform Infrared Measurements of Si Surface and Bulk Plasmas in Cl_2/O_2 and HBr/O_2 Electron Cyclotron Resonance Plasma Etching: Influence of Oxygen on Reaction Products
- In situ Monitoring of Product Species in Plasma Etching by Fourier Transform Infrared Absorption Spectroscopy
- Anisotropic Etching of n^+-Polysilicon Using Beam Plasmas Generated by Gas Puff Plasma Sources
- Chemical Kinetics of Chlorine in Electron Cyclotron Resonance Plasma Etching of Si ( Plasma Processing)
- Multicusp Electron-Cyclotron-Resonance Plasma Source Working with Microwaves Radially Injected through an Annular Slit
- Measurement of the Cl Atom Concentration in RF Chlorine Plasmas by Two-Photon Laser-Induced Fluorescence
- Plasma Chemical View of Magnetron and Reactive Ion Etching of Si with Cl_2 : Etching and Deposition Technology
- Plasma Chemical View of Magnetron and Reactive Ion Etching of Si with Cl_2
- Spin Polarization and Magneto-Coulomb Oscillations in Ferromagnetic Single Electron Devices
- Magneto-Coulomb Oscillation in Ferromagnetic Single Electron Transistors
- Enhanced Magnetic Valve Effect and Magneto-Coulomb Oscillations in Ferromagnetic Single Electron Transistor
- Magnetoresistance of Ni/NiO/Co Small Tunnel Junctions in Coulomb Blockade Regime
- A New Fabrication Method for Ultra Small Tunnel Junctions
- Modal-Matching Analysis of Loss in Bent Graded-Index Optical Slab Waveguides
- Coupled-Mode Analysis of Loss in Bent Single-Mode Optical Fibers
- Coupled-Mode Analysis of Bent Planar Waveguides with Finite Claddings
- Pure Bend Loss of TM Modes in Slab Optical Waveguides Bounded by Magnetic Walls
- Pure Bend Loss Evaluation of Slab Waveguide with Finite Claddings by Coupled-Mode Theory
- Conformal Step Coverage of (Ba,Sr)TiO_3 Films Prepared by Liquid Source CVD Using Ti(t-BuO)_2(DPM)_2
- Conformal Step Coverage of (Ba,Sr)TiO_3 Films Prepared by Liquid Source CVD Using Ti(t-BuO)_2(DPM)_2
- Effects of Post-Annealing on Dielectric Properties of (Ba, Sr)TiO_3 Thin Films Prepared by Liquid Source Chemical Vapor Deposition(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Mechanisms of X-Ray Radiation-Induced Damage in (Ba, Sr)TiO_3 Capacitors
- Influence of Buffer Layers and Barrier Metals on Properties of (Ba, Sr)TiO_3 Films Prepared by Liquid Source Chemical Vapor Deposition
- Mechanisms of Synchrotron X-Ray Irradiation-Induced Damage in (Ba, Sr)TiO_3 Capacitors
- A Mass Spectrometric Study of Reaction Mechanisms in Chemical Vapor Deposition of (Ba, Sr)TiO_3 Films
- (Ba, Sr)TiO_3 Films Prepared by Liquid Source Chemical Vapor Deposition on Ru Electrodes
- Reaction Mechanism and Electrical Properties of (Ba, Sr)TiO_3 Films Prepared by Liquid Source Chemical Vapor Deposition
- Surface Morphologies and Electrical Properties of (Ba, Sr)TiO_3 Films Prepared by Two-Step Deposition of Liquid Source Chemical Vapor Deposition
- Gate Voltage Dependence of the Resistance of a Two-Dimensional Array of Small Tunnel Junctions ( Quantum Dot Structures)
- Chemical Potential Dependence of Resistance of Two-Dimensional Array of Small Tunnel Junctions
- 超小型高周波イオン推進機におけるプラズマ源の周波数依存性
- 電気的手法を用いた物理的Si基板ダメージのプラズマプロセス依存性の検討(プロセス科学と新プロセス技術)
- 物理的プラズマダメージによるMOSFETバラツキ増大予測のための包括モデル(プロセス科学と新プロセス技術)
- マイクロプラズマスラスターの研究開発
- 宇宙マイクロ・ナノ工学とシリコンナノサテライト連携研究計画
- 古典的分子動力学計算による物理的プラズマダメージ形成機構の検討 : Fin型MOSFETでの欠陥生成機構(プロセス科学と新プロセス技術)
- プラズマチャージングダメージがMOSFETのRandom Telegraph Noise特性に及ぼす影響(プロセス科学と新プロセス技術)