Ono K | Advanced Technology R&d Center Mitsubishi Electric Corporation:(present Address)department Of Ae
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- 同名の論文著者
- Advanced Technology R&d Center Mitsubishi Electric Corporation:(present Address)department Of Aeの論文著者
関連著者
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Ono K
Advanced Technology R&d Center Mitsubishi Electric Corporation:(present Address)department Of Ae
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Ono K
Univ. California Ca Usa
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Ono K
Department Of Applied Chemistry The University Of Tokyo
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Ono K
The Faculty Of Engineering Ehime University
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斧 高一
京都大学大学院工学研究科
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ONO Katsuji
Fujitsu Laboratories Ltd.
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斧 高一
京大 大学院工学研究科
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KAWAHARA Toshio
Department of Materials Science and Engineering, National Defense Academy
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Yamamuka M
Mitsubishi Electric Corp. Hyogo Jpn
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Kawahara T
Semiconductor Leading Edge Technol. Inc. Tsukuba-shi Jpn
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斧 高一
京都大学大学院工学研究科航空宇宙工学専攻
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Ono K
Univ. Tsukuba Ibaraki Jpn
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Ono K
Univ. Tokyo Tokyo Jpn
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FUJIOKA Hiroshi
Department of Applied Chemistry, The University of Tokyo
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Ono Kouichi
Advanced Technology R&d Center Mitsubishi Electric Corporation:(present Address)department Of Ae
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Fujioka H
Univ. Tokyo Tokyo Jpn
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Fujioka Hiroshi
大日本製薬
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Ono Kanta
Department Of Engineering The University Of Tokyo
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OSHIMA Masaharu
Department of Engineering, University of Tokyo
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Oshima M
Department Of Applied Chemistry The University Of Tokyo
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KAWAHARA Takaaki
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Ootuka Youiti
Cryogenic Center University Of Tokyo
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Ootuka Youiti
Cryogenic Center The University Of Tokyo
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ONO Kouichi
Semiconductor Research Laboratory, Mitsubishi Electric Corporation
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YAMAMUKA Mikio
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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ONO Keiji
Cryogenic Center,University of Tokyo
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Oomori T
Mitsubishi Electric Corp. Hyogo Jpn
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Yamamuka Mikio
Advanced Technology R&d Center Mitsubishi Electric Corporation
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TUDA Mutumi
Ad Advanced Technology R〓D Center, Mitsubishi Electric Corporation
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Tuda M
Mitsubishi Electric Corp. Hyogo Jpn
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HORIKAWA Tsuyoshi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Tsuda M
Faculty Of Pharmaceutical Sciences Chiba University
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堀田 昌志
山ロ大学
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西川 恵子
千葉大学大学院融合科学研究科
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西川 恵子
千葉大
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江利口 浩二
京大
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SHIMADA Hiroshi
Cryogenic Center, The University of Tokyo
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Shimada H
Department Of Physics Chuo University
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堀田 昌志
山口大
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Yuuki A
Semiconductor Research Laboratory Mitsubishi Electric Corporation
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Yuuki Akimasa
Product Development Laboratory Mitsubishi Electric Corporation
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塚田 昌志
Graduate School Of Science And Engineering Yamaguchi University
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Hotta M
Ehime Univ. Matsuyama‐shi Jpn
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Hotta M
Graduate School Of Science And Engineering Yamaguchi University
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MIRIANASHVILI Maria
California Eastern Laboratories
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Hotta Masashi
Faculty of Engineering, Ehime University
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TARUTANI Masayoshi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Kobayashi S
Non Destructive Evaluation And Science Research Center Faculty Of Engineering Iwate University
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SAITO Kazuhiro
Tochigi Research Laboratories of Kao Corporation
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Kobayashi Satoru
Non Destructive Evaluation And Science Research Center Faculty Of Engineering Iwate University
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Tanimura Junji
The Authors Are With The Advanced Technology R&d Center Mitsubishi Electric Corporation
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高橋 和生
京都工芸繊維大
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高橋 和生
京都大学大学院工学研究科
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江利口 浩二
京都大学大学院工学研究科
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TANIMURA Junji
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Tanimura Junji
Advanced Technology R&d Center Mitsubishi Electric Corp
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Kobayashi Shun-ichi
Department of Physics, Faculty of Science, University of Tokyo
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HOTTA Masashi
Department of Electrical & Electronic Engineering, Yamaguchi University
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KAWAHARA Takaaki
Semiconductor Leading Edge Technologies, Inc.
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YAMAMUKA Mikio
Semiconductor Research Laboratory, Mitsubishi Electric Corporation
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YUUKI Akimasa
Semiconductor Research Laboratory, Mitsubishi Electric Corporation
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ONO Kazuo
Department of Surgical Pathology, Wakayama Medical College Hospital
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NISHIKAWA Kazuyasu
Semiconductor Research Laboratory, Mitsubishi Electric Corporation
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TUDA Mutumi
Semiconductor Research Laboratory, Mitsubishi Electric Corporation
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OOMORI Tatsuo
Semiconductor Research Laboratory, Mitsubishi Electric Corporation
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NAMBA Keisuke
Semiconductor Research Laboratory, Mitsubishi Electric Corporation
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ONO Kouichi
Central Research Laboratory, Mitsubishi Electric Corporation
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OOMORI Tatsuo
Central Research Laboratory, Mitsubishi Electric Corporation
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Namba K
Semiconductor Research Laboratory Mitsubishi Electric Corporation
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Tuda Mutumi
Semiconductor Research Laboratory Mitsubishi Electric Corporation
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Yuuki Akimasa
Semiconductor Research Laboratory Mitsubishi Electric Corporation
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Kobayashi Shun-ichi
Department Of Physics Faculty Of Science University Of Tokyo
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節原 裕一
国立大学法人大阪大学接合科学研究所
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IKEDA Takeshi
Department of Biotechnology, University of Tokyo
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斧 高一
京都大学
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HAYAKAWA Satio
Dept. of Astrophys., Nagoya University, Nagoya.
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KOINUMA Hideomi
Materials and Structures Laboratory, Tokyo Institute of Technology
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Makita T
Semiconductor Research Laboratory Mitsubishi Electric Corporation
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Makita Tetsuro
Semiconductor Research Laboratory Mitsubishi Electric Corporation
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Saito J
Extreme Ultraviolet Lithography System Dev. Assoc. (euva) Kanagawa Jpn
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Saito Junji
Fujitsu Laboratories Limited
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KONDO Kazuo
Fujitsu Laboratories Ltd.
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Ikeda Toshiaki
Murata Mfg. Co. Ltd.
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Saito Junji
Fujitsu Laboratories Ltd.
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Yagi R
Department Of Physics Graduate School Of Science The University Of Tokyo
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Yagi Ryuta
Department Of Physics Faculty Of Science University Of Tokyo
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Yagi Ryuta
Department Of Physics School Of Science The University Of Tokyo
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Yagi Ryuta
Department Of Physics School Of Sciences The University Of Tokyo
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Koinuma H
National Institute For Materials Science (nims)
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HAYAKAWA Shinjiro
Department of Applied Chemistry, Graduate School of Engineering, Hiroshima University
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節原 裕一
京都大学大学院 工学研究科
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KOINUMA Hideomi
Tokyo Institute of Technology
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Hayakawa S
Department Of Engineering Fundamentals Hiroshima University
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Hayakawa Shinjiro
Department Of Applied Chemistry University Of Tokyo
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Hayakawa Shinjiro
Department Of Applied Chemistry Graduate School Of Engineering Hiroshima University
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Komeya Katutoshi
Graduate School Of Environment And Information Science Yokohama National University
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SATO Yoshiyuki
NTT LSI Laboratories
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Saito J
New Business Development Department Nikon Corporation In Hitachi Maxell
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Saito Jun
Nikon Corp. New Business Development Department
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Koinuma Hideomi
Department Of Applied Physics Graduate School Of Engineering Nagoya University
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Koinuma Hideomi
Crest Japan Science And Technology Corporation
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Koinuma Hideomi
Department Of Industrial Chemistry Faculty Of Engineering University Of Tokyo
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Koinuma Hideomi
Department Of Industrial Chemistry University Of Tokyo
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SUITA Muneyoshi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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YOSHIMOTO Mamoru
Tokyo Institute of Technology
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Kondo K
Fujitsu Laboratories Ltd.
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WAKI Ichitaro
Department of Applied Chemistry, The University of Tokyo
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Yoshimoto Masahiro
Department Of Electronic Science And Engineering Faculty Of Engineering Kyoto University
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Yoshimoto Masahiro
Department Of Electronic Science And Engineering Kyoto University
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Kikuchi Hiromi
Department Of Applied Chemistry Graduate School Of Engineering Tohoku University
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Koinuma Hideomi
Materials And Structures Laboratory Tokyo Institute Of Technology
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Taki Masakazu
Semiconductor Research Laboratory, Mitsubishi Electric Corporation
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HANAZAKI Minoru
Central Research Laboratory, Mitsubishi Electric Corporation
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Taki Masakazu
Advanced Technology R&d Center Mitsubishi Electric Corporation
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SUMITANI Hiroaki
Advanced Technology R&D Center, Mitsubishi Electric Corp.
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Yoshimoto M
Materials And Structures Laboratory Tokyo Institute Of Technology
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Ikeda T
Univ. Tsukuba Ibaraki Jpn
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Waki Ichitaro
Department Of Applied Chemistry The University Of Tokyo
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Sato T
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Maria MIRIANASHVILI
Department of Electrical and Electronics Engineering, Faculty of Engineering, Ehime University
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MIRIANASHVILI Maria
Department of Electrical and Electronic Engineering, Faculty of Engineering, Ehime University
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Hanazaki M
Mitsubishi Electric Corp. Hyogo Jpn
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YAMAMURA Mikio
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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MATSUNO Shigeru
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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SATO Takehiko
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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UCHIKAWA Fusaoki
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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YUUKI Akimasa
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Yoshimoto M
Kyoto Inst. Technol. Kyoto Jpn
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Taki Masakazu
Semiconductor Research Laboratory Mitsubishi Electric Corporation
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Matsuno Shigeru
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Suita M
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Suita Muneyoshi
Advanced Technology R&d Center Mitsubishi Electric Corp.
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Kazawa Hideto
Department of Physics,Graduate School of Science,The University of Tokyo
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Kazawa Hideto
Department Of Physics Graduate School Of Science The University Of Tokyo
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Mano Takaaki
Department Of Applied Chemistry The University Of Tokyo
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KUROIWA Takeharu
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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NANBU Kazuo
Fujitsu Laboratories Ltd.
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YAGI Ryuta
Department of Pure and Applied Sciences, University of Tokyo
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KOUSAKA Hiroyuki
Department of Mechanical Science and 6ngineering, Nagoya University
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Ono Kouichi
Department Of Aeronautics And Astronautics Graduate School Of Engineering Kyoto University
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Hu Chenming
University Of California At Berkeley Department Of Electrical Engineering And Computer Science
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Hu Chenming
University Of California At Berkeley
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Nanbu Kazuo
Fujitsu Laboratories Limited
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Mikami Noboru
Semiconductor Research Laboratory
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Yoshii Kenji
Japan Atomic Energy Research Institute (jaeri)
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Yoshii Kenji
Japan Atomic Energy Research Institute
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三田村 崇司
京都大学大学院 工学研究科
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BABA Yuji
Japan Atomic Energy Research Institute
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Kuroiwa Takeharu
Advanced Technology R&d Center Mitsubishi Electric Corporation
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INABA Katsuhiko
X-ray Research Laboratory, RIGAKU CORPORATION
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Baba Yuji
Japan Atomic Energy Agency
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NISHIKAWA Kazuyasu
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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OOMORI Tatsuo
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Matsui Yasushi
Electronics Research Laboratory Corporate Research & Development Matsushita Electronics Corporat
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Maruta Hideaki
Tokyo Institute of Technology
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Matsuo Ryuji
X-ray Research Laboratory, Rigaku Corporation
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Ono Kazuo
The First, Department of Internal Medicine, Fukushima Medical College
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TSUTAHARA Koichiro
Kita-Itami Works, Mitsubishi Electric Corporation
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MATSUI Yasuji
Semiconductor Research Laboratory, Mitsubishi Electric Corporation
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NAKA Jiro
Materials & Electronic Devices Laboratory, Mitsubishi Electric Corporation
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Naka J
Japan Marine Sci. And Technol. Center(jamstec) Yokosuka Jpn
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NOMA Hirokazu
Department of Applied Chemistry, University of Tokyo
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URAGAMI Takeshi
Department of Applied Chemistry, The University of Tokyo
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TAKAGI Yasuo
Advanced Technology Research Laboratories, Nippon Steel Corporation
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KIMURA Masao
Advanced Technology Research Laboratories, Nippon Steel Corporation
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SUZUKI Tamaki
Advanced Technology Research Laboratories, Nippon Steel Corporation
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MIKI Hisayuki
Chichibu Research Laboratory, Showa Denko
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FUKIZAWA Akira
Chichibu Research Laboratory, Showa Denko
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Yamaguchi Akihisa
Department of Applied Chemistry, School of Engineering, The University of Tokyo
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YOSHIMURA Yusuke
Department of Applied Chemistry, University of Tokyo
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MAEYAMA Satoshi
NTT Laboratories
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SASAKI Teikichi
Japan Atomic Energy Research Institute
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Noma Hirokazu
Department Of Applied Chemistry University Of Tokyo
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Yamaguchi Akihisa
Department Of Applied Chemistry School Of Engineering The University Of Tokyo
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Mano Toshimasa
Department Of Applied Chemistry The University Of Tokyo
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Ootera Hiroki
Semiconductor Research Laboratory, Mitsubishi Electric Corporation
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TUDA Mutumi
Central Research Laboratory, Mitsubishi Electric Corporation
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Ootera H
Mitsubishi Electric Corp. Hyogo Jpn
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Ono Kazuo
The First Department Of Internal Medicine Fukushima Medical College
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Muto Y
The Institute For Materials Research Tohoku University
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Matsuo Ryuji
X-ray Research Laboratory Rigaku Corporation
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Inaba Katsuhiko
X-ray Research Laboratory Rigaku Corporation
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Miki Hisayuki
Chichibu Research Laboratory Showa Denko
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Suzuki Tamaki
Advanced Technology Research Laboratories Nippon Steel Corporation
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Hotta Masashi
The Faculty Of Engineering Ehime University
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Fukizawa Akira
Chichibu Research Laboratory Showa Denko
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Tahara Yasufumi
Department of Electrical and Electronic Engineering Faculty of Engineering, Ehime University
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Mirianashvili Maria
Faculty of Engineering, Ehime University
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Ono Kazuo
Faculty of Engineering, Ehime University
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Tahara Yasufumi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Ehime University
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HORIKAWA Tsuyoshi
The authors are with the Advanced Technology R&D Center, Mitsubishi Electric Corporation
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TANIMURA Junji
The authors are with the Advanced Technology R&D Center, Mitsubishi Electric Corporation
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KAWAHARA Takaaki
The authors are with the Advanced Technology R&D Center, Mitsubishi Electric Corporation
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YAMAMUKA Mikio
The authors are with the Advanced Technology R&D Center, Mitsubishi Electric Corporation
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TARUTANI Masayoshi
The authors are with the Advanced Technology R&D Center, Mitsubishi Electric Corporation
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ONO Kouichi
The authors are with the Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Nanbu K
Fujitsu Laboratories Ltd.
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Uragami Takeshi
Department Of Applied Chemistry The University Of Tokyo
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KAZAMA Hideto
Depatment of Physics,Graduate Sclool of Sciences,The University of Tokyo
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YAGI Ryuta
Depatment of Physics,Graduate Sclool of Sciences,The University of Tokyo
著作論文
- 2.ドライエッチングのモデルとその実験検証(ドライエッチングの科学と技術の新局面)
- 4.高誘電率(High-k)材料のドライエッチング(ドライエッチングの科学と技術の新局面)
- Highly Uniform Si-Doped GaAs Epitaxial Layers Grown by MBE Using a TEG, Arsenic, and Silicon System
- Substrate Temperature Dependence of Carbon Incorporation into GaAs Grown by MBE Using Triethylgallium and As_4
- 1.はじめに(ドライエッチングの科学と技術の新局面)
- 8.おわりに(ドライエッチングの科学と技術の新局面)
- 最近の展望 マイクロプラズマスラスター
- 第58回気体エレクトロニクス会議(58th Gaseous Electronics Conference)
- マイクロプラズマスラスターの研究開発 (特集 宇宙高温工学)
- 誘導結合型フルオロカーボンプラズマを用いた高誘電率HfO_2薄膜のエッチング
- 半導体プラズマプロセスシミュレーションとTCAD
- プラズマCVDと溶媒処理を用いたフルオロカーボン系多孔質構造Low-K薄膜の作成
- Numerical Analysis of the Electromagnetic Fields in a Microwave Plasma Source Excited by Azimuthally Symmetric Surface Waves
- Si ドライエッチング技術
- 3.1 プラズマエッチング : 3. プラズマプロセス装置におけるプラズマ・表面相互作用(プラズマ・表面相互作用) : 多様なPSI現象
- 宇宙マイクロ・ナノ工学とシリコンナノサテライト連携研究計画 (特集 宇宙高温工学)
- 先端プラズマエッチングプロセスのモデリングと体系化
- X-Ray Photoelectron Spectroscopy Study of Hetero-Interface between Manganese Pnictide and Mn-Zn Ferrite
- Epitaxial Growth of InAs on Single-Crystalline Mn-Zn Ferrite Substrates
- Preparation of (Ba, Sr)TiO_3 Thin Films by Chemical Vapor Deposition Using Liquid Sources
- Step Coverage and Electrical Properties of (Ba, Sr)TiO_3 Films Prepared by Liquid Source Chemical Vapor Deposition Using TiO(DPM)_2 ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Effect of Impurity at SiO_2/Si Interface on 2D Hole Gas
- Generalized Grazing Incidence-Angle X-Ray Diffraction Studies on InAs Quantum Dots on Si(100) Substrates
- The Effect of Surface Cleaning by Wet Treatments and Ultra High Vacuum Annealing for Ohmic Contact Formation of P-Type GaN
- Spin State Analysis of Epitaxial Mn Compound Films Using High Resolution X-Ray Fluorescence
- Chemical States of Piled-up Phosphorus and Arsenic Atoms at the SiO2/Si Interface (Proceedings of the Second International Conference on SRMS(Synchrotron Radiation in Materials Science)(2))
- Simulation of 2-Dimensional Hole Gas for PMOS Devices with Phosphorus Pile-Up
- Characterization of Phosphorus Pile-Up at the SiO_2/Si Interface
- In Situ Fourier Transform Infrared Measurements of Si Surface and Bulk Plasmas in Cl_2/O_2 and HBr/O_2 Electron Cyclotron Resonance Plasma Etching: Influence of Oxygen on Reaction Products
- In situ Monitoring of Product Species in Plasma Etching by Fourier Transform Infrared Absorption Spectroscopy
- Anisotropic Etching of n^+-Polysilicon Using Beam Plasmas Generated by Gas Puff Plasma Sources
- Chemical Kinetics of Chlorine in Electron Cyclotron Resonance Plasma Etching of Si ( Plasma Processing)
- Multicusp Electron-Cyclotron-Resonance Plasma Source Working with Microwaves Radially Injected through an Annular Slit
- Measurement of the Cl Atom Concentration in RF Chlorine Plasmas by Two-Photon Laser-Induced Fluorescence
- Plasma Chemical View of Magnetron and Reactive Ion Etching of Si with Cl_2 : Etching and Deposition Technology
- Plasma Chemical View of Magnetron and Reactive Ion Etching of Si with Cl_2
- Spin Polarization and Magneto-Coulomb Oscillations in Ferromagnetic Single Electron Devices
- Magneto-Coulomb Oscillation in Ferromagnetic Single Electron Transistors
- Enhanced Magnetic Valve Effect and Magneto-Coulomb Oscillations in Ferromagnetic Single Electron Transistor
- Magnetoresistance of Ni/NiO/Co Small Tunnel Junctions in Coulomb Blockade Regime
- A New Fabrication Method for Ultra Small Tunnel Junctions
- Modal-Matching Analysis of Loss in Bent Graded-Index Optical Slab Waveguides
- Coupled-Mode Analysis of Loss in Bent Single-Mode Optical Fibers
- Coupled-Mode Analysis of Bent Planar Waveguides with Finite Claddings
- Pure Bend Loss of TM Modes in Slab Optical Waveguides Bounded by Magnetic Walls
- Pure Bend Loss Evaluation of Slab Waveguide with Finite Claddings by Coupled-Mode Theory
- Conformal Step Coverage of (Ba,Sr)TiO_3 Films Prepared by Liquid Source CVD Using Ti(t-BuO)_2(DPM)_2
- Conformal Step Coverage of (Ba,Sr)TiO_3 Films Prepared by Liquid Source CVD Using Ti(t-BuO)_2(DPM)_2
- Effects of Post-Annealing on Dielectric Properties of (Ba, Sr)TiO_3 Thin Films Prepared by Liquid Source Chemical Vapor Deposition(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Mechanisms of X-Ray Radiation-Induced Damage in (Ba, Sr)TiO_3 Capacitors
- Influence of Buffer Layers and Barrier Metals on Properties of (Ba, Sr)TiO_3 Films Prepared by Liquid Source Chemical Vapor Deposition
- Mechanisms of Synchrotron X-Ray Irradiation-Induced Damage in (Ba, Sr)TiO_3 Capacitors
- A Mass Spectrometric Study of Reaction Mechanisms in Chemical Vapor Deposition of (Ba, Sr)TiO_3 Films
- (Ba, Sr)TiO_3 Films Prepared by Liquid Source Chemical Vapor Deposition on Ru Electrodes
- Reaction Mechanism and Electrical Properties of (Ba, Sr)TiO_3 Films Prepared by Liquid Source Chemical Vapor Deposition
- Surface Morphologies and Electrical Properties of (Ba, Sr)TiO_3 Films Prepared by Two-Step Deposition of Liquid Source Chemical Vapor Deposition
- Gate Voltage Dependence of the Resistance of a Two-Dimensional Array of Small Tunnel Junctions ( Quantum Dot Structures)
- Chemical Potential Dependence of Resistance of Two-Dimensional Array of Small Tunnel Junctions
- 超小型高周波イオン推進機におけるプラズマ源の周波数依存性
- 電気的手法を用いた物理的Si基板ダメージのプラズマプロセス依存性の検討(プロセス科学と新プロセス技術)
- 物理的プラズマダメージによるMOSFETバラツキ増大予測のための包括モデル(プロセス科学と新プロセス技術)
- マイクロプラズマスラスターの研究開発