KUROIWA Takeharu | Advanced Technology R&D Center, Mitsubishi Electric Corporation
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概要
関連著者
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KUROIWA Takeharu
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Kuroiwa Takeharu
Advanced Technology R&d Center Mitsubishi Electric Corporation
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YASUE Tsuneo
Fundamental Electronics Research Institute, Academic Frontier Promotion Center, Osaka Electro-Commun
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KOSHIKAWA Takanori
Fundamental Electronics Research Institute, Academic Frontier Promotion Center, Osaka Electro-Commun
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斧 高一
京都大学大学院工学研究科
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TANIMURA Junji
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Mikami Noboru
Advanced Technology R&d Center Mitsubishi Electric Corporation
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MARUNO Shigemitsu
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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MURAO Takeshi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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TOMIKAWA Akihiko
Fundamental Electronics Research Institute, Osaka Electro-Communication University
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NAGATA Michihiko
Fundamental Electronics Research Institute, Osaka Electro-Communication University
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Ono K
Department Of Applied Chemistry The University Of Tokyo
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Ono K
Advanced Technology R&d Center Mitsubishi Electric Corporation:(present Address)department Of Ae
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Ono K
Univ. California Ca Usa
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Murao Takeshi
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Tanimura Junji
Advanced Technology R&d Center Mitsubishi Electric Corp
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Koshikawa Takanori
Fundamental Electronics Research Institute Academic Frontier Promotion Center Osaka Electro-communic
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Tomikawa Akihiko
Fundamental Electronics Research Institute Osaka Electro-communication University
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KAWAHARA Toshio
Department of Materials Science and Engineering, National Defense Academy
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FUJISAKI Yoshihisa
Central Research Laboratory, Hitachi Ltd.
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FURUKAWA Taisuke
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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ISHIWARA Hiroshi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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YAMAMUKA Mikio
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Koshikawa Takanori
Fundamental Electronics Research Institute Osaka Electro-communication University
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Ono Kouichi
Advanced Technology R&d Center Mitsubishi Electric Corporation:(present Address)department Of Ae
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Ono K
The Faculty Of Engineering Ehime University
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Ishiwara H
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Yasue Tsuneo
Fundamental Electronics Research Institute Osaka Electro-communication University
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Yamamuka M
Mitsubishi Electric Corp. Hyogo Jpn
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Yamamuka Mikio
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Kawahara T
Semiconductor Leading Edge Technol. Inc. Tsukuba-shi Jpn
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KAWAHARA Takaaki
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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TARUTANI Masayoshi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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HORIKAWA Tsuyoshi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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SATO Takehiko
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Tanimura Junji
The Authors Are With The Advanced Technology R&d Center Mitsubishi Electric Corporation
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Horikawa Tsuyoshi
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Tarutani Masayoshi
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Kawahara T
Faculty Of Technology Tokyo University Of Agriculture And Technology
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Maruno Shigemitsu
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Nagata Michihiko
Fundamental Electronics Research Institute Osaka Electro-communication University
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Ono Kouichi
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Yasue Tsuneo
Fundamental Electronics Research Institute Academic Frontier Promotion Center Osaka Electro-communication University
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Kawahara Takaaki
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Maruo Takeshi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
著作論文
- Effects of Oxygen Vacancy Diffusion on Leakage Characteristics of Pt/(Ba_Sr_)TiO_3/Pt Capacitor
- Influence of Buffer Layers and Barrier Metals on Properties of (Ba, Sr)TiO_3 Films Prepared by Liquid Source Chemical Vapor Deposition
- Fatigueless Ferroelectric Capacitors with Ruthenium Bottom and Top Electrodes Formed by Metalorganic Chemical Vapor Deposition