NANBU Kazuo | Fujitsu Laboratories Ltd.

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著作論文

Highly Uniform Si-Doped GaAs Epitaxial Layers Grown by MBE Using a TEG, Arsenic, and Silicon System
Highly Uniform, High-Purity GaAs Epitaxial Layer Grown by MBE Using Triethylgallium and Arsenic : Semiconductors and Semiconductor Devices
GaAs Surface Cleaning with HCl Gas and Hydrogen Mixture for Molecular-Beam-Epitaxial Growth : Semiconductors and Semiconductor Devices
Effect of Thermal Etching on GaAs Substrate in Molecular Beam Epitaxy
Effect of H_2 on the Quality of Si-Doped Al_xGa_As Grown by MBE
Reply to the Comment by H.L. Stormer
The Effect of Growth Temperature on the Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
Magnetoconductance Investigations of Al_xGa_As/GaAs Heterojunction FET in Strong Magnetic Fields
Galvanomagnetic Study of 2-Dimensional Electron Gas in Al_xGa_As/GaAs Heterojunction FET
Room-Temperature Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures
Extremely High Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE
Electronic States in Selectively Si-Doped N-AlGaAs/GaAs/N-AlGaAs Single Quantum Well Structures Grown by MBE
Improved 2DEG Mobility in Inverted GaAs/n-AlGaAs Heterostructures Grown by MBE
Improved Electron Mobility Higher than 10^6 cm^2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
Dependence of the Mobility and the Concentration of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-Al_xGa_As Heterostructure on the AlAs Mole Fraction
A New Field-Effect Transistor with Selectively Doped GaAs/n-Al_xGa_As Heterojunctions

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