Magnetoconductance Investigations of Al_xGa_<1-x>As/GaAs Heterojunction FET in Strong Magnetic Fields
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1981-06-05
著者
-
Hashimoto Hisao
Fujitsu Limited
-
Takeyama Shojiro
Department Of Material Physics Faculty Of Engineering Science Osaka University
-
NANBU Kazuo
Fujitsu Laboratories Ltd.
-
Nanbu Kazuo
Fujitsu Laboratories Limited
-
NARITA Shin-ichiro
Department of Material Physics, Faculty of Engineering Science, Osaka University
-
Hiyamizu Satoshi
Fujitsu Limited
-
Hiyamizu Satoshi
Fujitsu Laboratories Limited
-
LUO Wen
Department of Material Physics, Faculty of Engineering Science, Osaka University
-
Narita Shin-ichiro
Department Of Material Physics
-
Narita Shin-ichiro
Department Of Material Physics Faculty Of Engineering Science Osaka University
-
Luo Wen
Department Of Material Physics Faculty Of Engineering Science Osaka University
-
Nanbu K
Fujitsu Laboratories Ltd.
-
Hashimoto Hisao
Fujitsu Laboratories Limited
関連論文
- Highly Uniform Si-Doped GaAs Epitaxial Layers Grown by MBE Using a TEG, Arsenic, and Silicon System
- Highly Uniform, High-Purity GaAs Epitaxial Layer Grown by MBE Using Triethylgallium and Arsenic : Semiconductors and Semiconductor Devices
- GaAs Surface Cleaning with HCl Gas and Hydrogen Mixture for Molecular-Beam-Epitaxial Growth : Semiconductors and Semiconductor Devices
- Effect of Thermal Etching on GaAs Substrate in Molecular Beam Epitaxy
- Far-Infrared Photoconductivity and Photo-Hall Effects in Antimony Doped Germanium
- The Band Structure Parameters Determination of the Quaternary Semimagnetic Semiconductor Alloy Hg_Cd_xMn_yTe
- A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)
- Tunneling Hot Electron Transistor Using GaAs/AlGaAs Heterojunctions
- Far-Infrared Absorption Spectra of Impurity Band in n-Type Germanium
- Formations of D^- Complexes and D^- Band in Germanium
- The Effects of Tungsten-Halogen Lamp Annealing on a Selectively Doped GaAs/N-AlGaAs Heterostructure Grown by MBE
- Far-Infrared Germanium Detectors
- Structure Analysis of GaAs-AlAs Superlattice Grown by Molecular Beam Epitaxy
- Study of Cryclotron Resonance for Ellipsoidal Energy Surface by Circularly Polarized Light
- A Technique for Measurement of Far-Infrared Cyclotron Resonance in Intense Pulsed Magnetic Field
- Effect of Impurity Interaction upon Ionization Energy of Donor-Electrons in Germanium
- Effect of H_2 on the Quality of Si-Doped Al_xGa_As Grown by MBE
- Reply to the Comment by H.L. Stormer
- The Effect of Annealing on the Electrical Properties of Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE
- The Effect of Growth Temperature on the Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
- Magnetoconductance Investigations of Al_xGa_As/GaAs Heterojunction FET in Strong Magnetic Fields
- Galvanomagnetic Study of 2-Dimensional Electron Gas in Al_xGa_As/GaAs Heterojunction FET
- Room-Temperature Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures
- Extremely High Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE
- Optical Determination of Dielectric Constant in Black Phosphorus
- Electrical Investigation of Pase Transition in Black Phosphorus under High Pressure
- Far-Infrared Cyclotron Resonance Absorptions in Black Phosphorus Single Crystals
- Infrared Investigation of Lattice Vibration in Black Phosphorus
- Electrical Properties of Black Phosphorus Single Crystals
- Growth of Large Single Crystals of Black Phosphorus under High Pressure
- Electronic States in Selectively Si-Doped N-AlGaAs/GaAs/N-AlGaAs Single Quantum Well Structures Grown by MBE
- Improved 2DEG Mobility in Inverted GaAs/n-AlGaAs Heterostructures Grown by MBE
- Improved Electron Mobility Higher than 10^6 cm^2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
- Implantation into an AlGaAs/GaAs Heterostructure : B-6: III-V DEVICE TECHNOLOGY
- Dependence of the Mobility and the Concentration of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-Al_xGa_As Heterostructure on the AlAs Mole Fraction
- Electrical Properties of Si-Doped Al_xGa_As Layers Grown by MBE
- Influence of MBE Growth Conditions on Persistent Photoconductivily Effects in N-AlGaAs and Selectively Doped GaAs/AlGaAs Heterostructures
- Energy-Band Offset of In_Ga_As-In_(Ga_AI_x)_As Heterostructures, Determined by Photoluminescenee Excitation Spectroscopy of Quasi-Parabolie Quantum Wells Grown by MBE
- Optical Study of α-Fe_2O_3 under Ultrahigh Pressure
- Quantum Well Width Dependence of Negative Differential Resistance of In_Al_As/In_Ga_As Resonant Tunneling Barriers Grown by MBE
- Extremely High 2DEG Concentration in Selectively Doped In_Ga_As/N-In_Al_As Heterostructures Grown by MBE
- Conduction Band Edge Discontinuity of In_Ga_As/In_(Ga_1 _xAl_x)_As(0≦x≦1) Heterostructures
- MBE Growth of InGaAlAs Lattice-Matched to InP by Pulsed Molecular Beam Method
- MBE Growth of High-Quality GaAs Using Triethylgallium as a Gallium Source
- Selectively Doped GaAs/ N-Al_Ga_As Heterostructures Grown by Gas-Source MBE : Semiconductors and Semiconductor Devices
- Extremely High-Speed Lattice-Matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff Frequency
- Far-Infrared Photoconductivity in Gallium Arsenide
- High Electron Mobility Transistor Logic
- Enhancement-Mode High Electron Mobility Transistors for Logic Applications
- A Pseudomorphic In_Ga_As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
- Back-Gated Field Effect in a Double Two-Dimensional Electron Gas Structure
- Si Atomic-Planar-Doping in GaAs Made by Molecular Beam Epitaxy
- A New Heterostructure for 2DEG System with a Si Atomic-Planar-Doped AlAs-GaAs-AlAs Quantum Well Structure Grown by MBE
- D^- States in Germainum
- Optical Properties of Zinc Telluride in the Infrared
- Monolithic 1×4 Array of Uniform Radiance AlGaAs-GaAs LED's Grown by Molecular Beam Epitaxy
- Uniaxial Stress and Temperature Dependences of Photoluminescence in GaAs_P_x
- Lattice Dielectric Constant of p-PbTe in the Far-Infrared Region
- Parallel Electron Transport and Field Effects of Electron Distributions in Selectively-Doped GaAs/n-AlGaAs
- Hall Effect in Hg_Cd_xTe
- Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBE
- Effect of Silicon Doping Profile on I-V Characteristics of an AlGaAs/GaAs Resonant Tunneling Barrier Structure Grown by MBE
- N-P Transition in InSb under Hydrostatic Pressure
- Influence of Spin on Quantum Oscillations of Magnetoresistance in Hg1-xCdxTe (Selected Topics in Semiconductor Physics) -- (Transport)
- New Millimeter and Submillimeter Wave Detecting System Utilizing n-InSb Electronic Bolometer
- Photoluminescenee Investigation of Donor-Level Deepening in GaAs under Hydrostatic Pressure
- Shubnikov-de Haas Measurements in N-Type Pb_Sn_xTe
- Formation of n-Layer in In_Ga_As by Si Implantation
- Far-Infrared Observation of D^- Band in n-Type Germanium
- InGaAlAs /InGaAs and InAlAs/InGaAlAs Quantum-Well Structures Grown by MBE Using Pulsed Molecular Beam Method
- Shallow Impurity States in Germanium under Electrical Breakdown
- Far-Infrared Cyclotron Resonance of n-Type InSb under Electric Field
- A Remark on the Cyclotron Resonance of Piezoelectric Polarons in CdS at Far-Infrared Region
- Uniaxial Stress and Magnetic Field Effects on Far-Infrared Photoconductivity of D^- Centers in P,As and Li Doped Si Crystals
- Study of Absorption Spectra of Excitons in Cu_2O by Wavelength Modulation Technique
- Cyclotron Resonance in an n-Type Inversion Layer on Hg_Cd_xTe Alloy
- Singlet-Triplet Optical Transitions in the Ground States of Arsenic Donors in Germanium
- Reflectivity of CdCr_2Se_4 near the Curie Point
- Cyclotron Resonances in p-Ge and p-Si in Very High Magnetic Fields
- Analysis of Wavelength Derivative Spectra of Exciton in Cu_2O
- Far-Infrared Investigations of Magneto-Plasma Resonances of Electron-Hole Drops in Germanium
- Far-Infrared Magnetoabsorptions of Free and Bound Excitons in Highly[111]-Stressed Germanium
- Infrared Reflection Spectra of Lattice Vibrations in Mixed Crystals Cd_xHg_Te
- Epitaxial Growth of Indium Phosphide in an Open Flow System
- Lattice Vibration Spectra of Zn_xCd_Te Alloys
- A New Field-Effect Transistor with Selectively Doped GaAs/n-Al_xGa_As Heterojunctions