Far-Infrared Cyclotron Resonance of n-Type InSb under Electric Field

概要

論文の詳細を見る
The problem of impurity banding in n-type InSb has been investigated by means of far-infrared cyclotron resonance under electric field and the results have been compared with the resistivity data in magnetic field. From the cyclotron resonance measurement, it is found that for the sample of the elective donor concentration, N_D-N_A=1.8×10^<14>cm^<-3>, the impurity band clearly separates from the conduction band at 4.6kOe, whereas for the sample of N_D-N_A=1.7×10^<15>cm^<-3>, the impurity band cannot be distinguished from the conduction band in low magnetic field, and the separation is observed at 19.3kOe. These results of the optical measurements are consistent with those obtained from the resisvity measurements, and they are compared with both the theory based on isolated impurity states and that on impurity banding.
社団法人日本物理学会の論文
1970-03-05