Implantation into an AlGaAs/GaAs Heterostructure : B-6: III-V DEVICE TECHNOLOGY
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1983-02-28
著者
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Ishikawa T
Riken Harima Institute
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Saito J
Extreme Ultraviolet Lithography System Dev. Assoc. (euva) Kanagawa Jpn
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Saito Junji
Fujitsu Laboratories Limited
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ISHIKAWA Tomonori
Fujitsu Laboratories LTD.
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Saito Junji
Fujitsu Laboratories Ltd.
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HIYAMIZU Satoshi
Graduate School of Engineering Science, Osaka University
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Hiyamizu Satoshi
Fujitsu Limited
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Nishi Hidetoshi
Fujitsu Limited
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Ishikawa T
National Space Dev. Agency Of Japan Ibaraki Jpn
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Hiyamizu Satoshi
Fujitsu Laboratories Limited
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Saito J
New Business Development Department Nikon Corporation In Hitachi Maxell
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Saito Jun
Nikon Corp. New Business Development Department
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INADA Tsuguo
Fujitsu Laboratories Limited
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Ishikawa Tomonori
Fujitsu Limited
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Ishikawa Tomonori
Fujitsu Laboratories Limited
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Ishikawa Takatoshi
Department Of Applied Physics Faculty Of Science Fukuoka University
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Nishi Hidetoshi
Fujitsu Laboratories Limited
関連論文
- InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling
- Study on the Si(111) √×√ - Ag Surface Structure by X-Ray Diffraction : Surfaces, Interfaces and Films
- Highly Uniform Si-Doped GaAs Epitaxial Layers Grown by MBE Using a TEG, Arsenic, and Silicon System
- Substrate Temperature Dependence of Carbon Incorporation into GaAs Grown by MBE Using Triethylgallium and As_4
- Highly Uniform, High-Purity GaAs Epitaxial Layer Grown by MBE Using Triethylgallium and Arsenic : Semiconductors and Semiconductor Devices
- GaAs Surface Cleaning with HCl Gas and Hydrogen Mixture for Molecular-Beam-Epitaxial Growth : Semiconductors and Semiconductor Devices
- Effect of Thermal Etching on GaAs Substrate in Molecular Beam Epitaxy
- Interference of Nuclear Bragg Scattered X-Rays in X-Ray Interferometer with Large Optical Path Difference
- Time Domain Interferometry in X-Ray Region Using Nuclear Resonant Scattering
- Time-Delayed Interferometry with Nuclear Resonant Scattering of Synchrotron Radiation
- Flux Growth and Characterization of α-^Fe_2O_3 Single Crystals for Nuclear Bragg Scattering Optical Components
- X-Ray Standing Wave Analysis of GaAs/Si Interface
- Focusing Properties of a Linear-Phase Bragg-Fresnel Lens
- A Plane Wave Diffraction on an Amplitude-Phase Laue Microinterferometer
- X-Ray Standing Wave Analysis of Al/GaAs/Si(111)
- High-Resolution Measurements of Nuclear Bragg Scattering from a Synthetic α-^Fe_2O_3 Crystal
- An X-Ray Phase Plate Using Bragg-Case Diffraction
- Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
- Extremely Flat Interfaces in In_xGa_As/Al_Ga_As Quantum Wells Grown on (411)A GaAs Substrates by Molecular Beam Epitaxy
- Extremely Flat Interfaces in In_xGa_As/Al_Ga_As Quantum Wells Grown on (411)A GaAs Substrates by MBE
- High-Density GaAs/AlAs Quantum Wires Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
- Highly Uniform GaAs/AIAs Quantum Wires Grown on [001] Ridges of GaAs(100) Patterned Substrates by Molecular Beam Epitaxy
- Extremely Flat Interfaces in GaAs/AlGaAs Quantum Wells Grown on GaAs (411)A Substrates by Molecular Beam Epitaxy
- Tunneling Hot Electron Transistor Using GaAs/AlGaAs Heterojunctions
- First Application of X-ray Refraction-based Computed Tomography to a Biomedical Object(Physiology)
- Measurement of Local Lattice Distortion in Silicon by Imaging-Plate Plane-Wave X-Ray Topography with Image Magnification
- Time-Resolved X-Ray Diffraction Measurement of Silicon Surface during Laser Irradiation under Grazing-Incidence Conditions
- Novel Analysis System of Imaging-Plate Plane-Wave X-Ray Topography for Characterizing Lattice Distortion in Silicon
- Switching of Photon Helicities in the Hard X-Ray Region with a Perfect Crystal Phase Retarder
- Time-Resolved X-Ray Diffraction from a Silicon Crystal Irradiated by a Q-Switched Nd:YAG Laser : Condensed Matter
- X-Ray Standing Wave Method Applied to the Characterization of InGaAsP Alloy Semiconductor Thin Film
- Observation of X-Ray Diffraction Spots from the (√×√)R30°Bi Structure on the Si(111) Surface under the Condition of Large Incidence Angle
- Structure Analysis of the NiSi_2/(111)Si Interface by the X-Ray Standing Wave Method
- Photoreflectance and Photoluminescence Study of (GaAs)_m/(AlAs)_5 (m=3-11)Superlattices: Direct and Indirect Transition
- Effect of H_2 on the Quality of Si-Doped Al_xGa_As Grown by MBE
- The Effect of Annealing on the Electrical Properties of Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE
- The Effect of Growth Temperature on the Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
- Electronic States in Selectively Si-Doped N-AlGaAs/GaAs/N-AlGaAs Single Quantum Well Structures Grown by MBE
- Improved 2DEG Mobility in Inverted GaAs/n-AlGaAs Heterostructures Grown by MBE
- Improved Electron Mobility Higher than 10^6 cm^2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
- Implantation into an AlGaAs/GaAs Heterostructure : B-6: III-V DEVICE TECHNOLOGY
- Dependence of the Mobility and the Concentration of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-Al_xGa_As Heterostructure on the AlAs Mole Fraction
- Electrical Properties of Si-Doped Al_xGa_As Layers Grown by MBE
- Study of 4p Electronic States Related to Magnetic Phase Transition in Mn_3MC (M=Zn and Ga) by X-ray Magnetic Circular Dichroism(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Influence of MBE Growth Conditions on Persistent Photoconductivily Effects in N-AlGaAs and Selectively Doped GaAs/AlGaAs Heterostructures
- Near-1.3-μm High-Intensity Photoluminescence at Room Temperature by InAs/GaAs Multi-Coupled Quantum Dots
- Fast Recovery from Excitonic Absorption Bleaching in Type-II : GaAs/AlGaAs/AlAs Tunneling Biquantum Well
- Quantum Well Width Dependence of Negative Differential Resistance of In_Al_As/In_Ga_As Resonant Tunneling Barriers Grown by MBE
- Extremely High 2DEG Concentration in Selectively Doped In_Ga_As/N-In_Al_As Heterostructures Grown by MBE
- Conduction Band Edge Discontinuity of In_Ga_As/In_(Ga_1 _xAl_x)_As(0≦x≦1) Heterostructures
- MBE Growth of InGaAlAs Lattice-Matched to InP by Pulsed Molecular Beam Method
- MBE Growth of High-Quality GaAs Using Triethylgallium as a Gallium Source
- Transmission-Type X-Ray Phase Retarder Using Ge Crystal in Laue Diffraction Geometry
- Synchrotron Plane Wave X-Ray Topography of 6 inch Diameter Si Crystal
- Generation Rule of the Slip Dislocation in LEC GaAs Crystal
- The Effect of Reduction of Dislocation Density on the Lattice Distortions in Undoped GaAs Single Crystal Grown by LEC Method
- Synchrotron Plane Wave X-Ray Topography of GaAs with a Separate (+, +) Monochro-Collimator
- X-Ray Topography Examination of Lattice Distortions in LEC-Grown GaAs Single Crystals
- Structural Analysis of the NiSi_2/(111)Si Interface by the X-Ray Standing-Wave Method
- Selectively Doped GaAs/ N-Al_Ga_As Heterostructures Grown by Gas-Source MBE : Semiconductors and Semiconductor Devices
- Effect of flatness of heterointerfaces on device performance of InP-based HEMTs
- Effect of Bottom SiN Thickness for AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors Using SiN/SiO_2/SiN Triple-Layer Insulators
- AlGaN/GaN MIS-HEMTs Fabricated Using SiN/SiO_2/SiN Triple-Layer Insulators
- Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance
- Extremely High-Speed Lattice-Matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff Frequency
- Fabrication Technology and Device Performance of Sub-50-nm-Gate InP-Based High Electron Mobility Transistors
- Recording Power Characteristics of 130mm Overwritable MO Disk by Laser Power Modulation Method
- Direct Overwrite by Light Power Modulation on Magneto-Optical Multi-Layered Media : DRIVE TECHNIQUE
- Effects of GaAs-Surface Roughness on the Electron-Beam Patterning Characteristics of a Surface-Oxide Layer
- In Situ Fabrication of Buried GaAs/AlGaAs Quantum-Well Mesa-Stripe Structures with Improved Regrown Interfaces
- In situ Electron-beam Processing for GaAs/AlGaAs Nano-structures
- Improvement in Patterning Characteristics of GaAs Oxide Mask Used in In Situ Electron-Beam Lithography
- In Situ GaAs Patterning and Subsequent Molecular-Beam Epitaxial Regrowth of AlGaAs/GaAs Wire Structures
- Electron Beam Patterning Mechanism of GaAs Oxide Mask Layers Used in In Situ Electron Beam Lithography
- Cathodoluminescence of Wirelike GaAs/AlAs Quantum Well Structures Grown on Substrates Patterned with [001] Mesa Stripes
- Characterization of In Situ Cl_2-Etched GaAs Buffer Layers and Regrown GaAs/AlGaAs Quantum Welts
- Helicity-Modulation Technique Using Diffractive Phase Retarder for Measurements of X-ray Magnetic Circular Dichroism
- Laue-Case Plane Wave Topography Using Synchrotron Radiation to Reveal Microdefects in a Thinned Silicon Crystal
- Observation of Microdefects in Thin Silicon Crystals by Means of Plane-Wave Topography Using Synchrotron X-Radiation
- Optimum Recording Conditions of Direct Overwrite Magneto-Optical Disk Drive for the Widest Power Margin
- Modeling Thermal Diffusion of Scanned and Focused Laser Power on Direct Overwrite Magneto-Optical Disk
- Improved Theory for Carrier Leakage and Diffusion in Multiquantum-well Semiconductor Lasers
- Strained Layer Multiquantum Barriers with Improved Carrier Injection and Confinement
- A Pseudomorphic In_Ga_As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
- A New Heterostructure for 2DEG System with a Si Atomic-Planar-Doped AlAs-GaAs-AlAs Quantum Well Structure Grown by MBE
- Sub-100 nm Patterning of GaAs Using In Situ Electrom Beam Lithography
- Photoluminescence Study of Electron-Beam-Induced Damage in GaAs/AlGaAs Quantum-Well Structures
- Role of an Electron Beam in the Modification of a GaAs Oxide Mask for in situ EB Lithography
- 2 GB/130 mm Capacity Direct-Overwrite Magneto-Optical Disk
- C/N Improvement of Direct Overwrite Magneto-Optical Disk by Adding a GdFeCo Readout Layer : Media
- Formation of DX Centers by Heavy Si Doping in MBE-Grown Al_xGa_As with Low Al Content
- Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBE
- Effect of Silicon Doping Profile on I-V Characteristics of an AlGaAs/GaAs Resonant Tunneling Barrier Structure Grown by MBE
- Time Evolution of Excitonic Absorption Bleaching of Resonant Tunneling Bi-Quantum-Well Structures
- Negative Differential Resistance of Strain-Free InGaAs/AlAsSb Resonant Tunneling Barrier Structures Lattice-Matched to InP
- Fast Recovery of Excitonic Absorption Peaks in Tunneling Bi-Quantum-Well Structures
- Picosecond Characterization of InGaAs/InAlAs Resonant Tunneling Barrier Diode by Electro-Optic Sampling
- Raman Spectrum of Selenium Dissolved in an Aqueous Solution of Sodium Sulfide
- Raman Spectra of Rhombohedral and α-Monoclinic Selenium under High Hydrostatic Pressure
- Stress-Released MBE Growth on GaAs on Si (001) with a Si-GaAs Superlattice Buffer