Formation of n-Layer in In_<0.53>Ga_<0.47>As by Si Implantation
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概要
- 論文の詳細を見る
Electrical activtaion behavior of Si atoms implanted into LPE-grown In_<0.53>Ga_<0.47>As layer is discussed. Activation of Si atoms occurs during 500-700℃ heat treatment, corresponding to the annealing out of the lattice disorders as observed by the channeling analysis. Annealing at 700℃ of 1×10^<14> Si ions cm^<-2> implanted InGaAs resulted in the formation of an n-layer having a maximum electron mobility of 7000 cm^2/V・s at the corresponding free electron concentration of 8×10^<17> cm^<-3>, which is comparable to the data obtained for the epitaxially grown layers.
- 社団法人応用物理学会の論文
- 1982-07-20
著者
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BAMBA Yasuo
Fujitsu Laboratories Ltd.
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Bamba Yasuo
Fujitsu Laboratories Limited
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SAKURAI Teruo
Fujitsu Laboratories Limited
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Hashimoto Hisao
Fujitsu Laboratories Limited
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Nishi Hidetoshi
Fujitsu Laboratories Limited
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KAWATA Haruo
Fujitsu Laboratories Limited
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