Sasa Shigehiko | Nanomaterials Microdevices Research Center Osaka Institute Of Technology
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概要
関連著者
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Sasa Shigehiko
Nanomaterials Microdevices Research Center Osaka Institute Of Technology
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Sasa S
Fujitsu Laboratories Ltd.
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Inoue Masataka
Nanomaterials Microdevices Research Center Osaka Institute Of Technology
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HIYAMIZU Satoshi
Graduate School of Engineering Science, Osaka University
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SASA Shigehiko
Fujitsu Laboratories Ltd.
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Hiyamizu Satoshi
Fujitsu Limited
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Hiyamizu Satoshi
Fujitsu Laboratories Limited
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Inoue M
Department Of Electrical Engineering Osaka Prefectural Technical College
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Inoue M
Osaka Inst. Technol. Osaka Jpn
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Inoue M
Setsunan Univ. Osaka Jpn
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Inoue Masami
Association Of Super-advanced Electronics Technologies (aset)
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Inoue M
Assoc. Super‐advanced Electronics Technol. (aset) Yokohama Jpn
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Inoue M
Nanomaterials Microdevices Research Center Osaka Institute Of Technology
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Inoue M
Kyoto Univ. Kyoto Jpn
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Inoue M
Advanced Technology R&d Center Mitsubishi Electric Corp.
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Ishikawa T
Riken Harima Institute
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Inoue M
Kagoshima Univ. Kagoshima Jpn
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YANO Mitsuaki
Nanomaterials Microdevices Research Center, Osaka Institute of Technology
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Koike Kazuto
Nanomaterials Microdevices Research Center Osaka Institute Of Technology
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Inoue Mitsuteru
Department Of Electrical & Electronic Engineering. Toyohashi University Of Technology
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Inoue Masataka
Department of Operative Dentistry, Osaka Dental University
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Inoue Masataka
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Inoue Masumi
Department Of Quantum Engineering Nagoya University
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Ishikawa Takatoshi
Department Of Applied Physics Faculty Of Science Fukuoka University
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ISHIKAWA Tomonori
Fujitsu Laboratories LTD.
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KONDO Kazuhiro
Fujitsu Limited
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Komeya Katutoshi
Graduate School Of Environment And Information Science Yokohama National University
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Ishikawa T
National Space Dev. Agency Of Japan Ibaraki Jpn
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Ogata Ken-ichi
Nanomaterials Microdevices Research Center Osaka Institute Of Technology
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SASA Shigehiko
Department of Electrical Engineering, Osaka Institute of Technology
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Kondo Kazuhiro
Fujitsu Laboratories Ltd.
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Kondo K
Fujitsu Laboratories Ltd.
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ISHIKAWA Hideaki
Fujitsu Laboratories Ltd.
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Ishikawa T
Fujitsu Laboratories Ltd.
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Ishikawa Tomonori
Fujitsu Limited
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Ishikawa Tomonori
Fujitsu Laboratories Limited
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Yano M
Nanomaterials Microdevices Research Center Osaka Institute Of Technology
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Sasa Shigehiko
Department Of Electrical Engineering Osaka Institute Of Technology
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MUTO Shunichi
Fujitsu Laboratories Ltd.
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Saito J
Extreme Ultraviolet Lithography System Dev. Assoc. (euva) Kanagawa Jpn
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Saito Junji
Fujitsu Laboratories Limited
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Ikeda Toshiaki
Murata Mfg. Co. Ltd.
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Saito Junji
Fujitsu Laboratories Ltd.
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Saito J
New Business Development Department Nikon Corporation In Hitachi Maxell
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Saito Jun
Nikon Corp. New Business Development Department
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Muto S
Kek Ibaraki
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INOUE Morio
Kyoto Research Laboratory, Matsushita Electronics Corporation
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Ikeda T
Toshiba Corp. Yokohama Jpn
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IKEDA Takatoshi
Department of Electrical Engineering, Osaka Institute of Technology
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Ikeda T
Univ. Tsukuba Ibaraki Jpn
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Ieda M
Department Of Electrical Engineering Nagoya University
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Ieda M
Department Of Electrical Engineering Nagoya University:(present Address) Department Of Electrical En
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Ikeda Toshio
Department of Applied Chemistry, The University of Tokyo
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NAKATA Yoshiaki
Fujitsu Laboratories Ltd.
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SUGIYAMA Yoshihiro
Fujitsu Limited
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INATA Tsuguo
Fujitsu Laboratories Ltd.
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Sugiyama Y
Fujitsu Laboratories Ltd.
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Sugiyama Y
Jst‐crest Ibaraki Jpn
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TANIGUCHI Kenji
Department of Cancer Research, Fuji Gotemba Research Laboratories, Chugai and Pharmaceutical Co
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NANBU Kazuo
Fujitsu Laboratories Ltd.
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Nanbu Kazuo
Fujitsu Laboratories Limited
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FUJII Toshio
Fujitsu Laboratories Ltd.
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Nishikawa Y
Toshiba Corp. Kawasaki Jpn
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Hamaguchi Chihiro
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Hamaguchi Chihiro
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
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Fujii Toshio
Fujitsu Laboratories Lid.
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Sugiyama Yoshinobu
Fujitsu Laboratories Ltd.
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Hashimoto Mitsuhiro
Nanomaterials Microdevices Research Center Osaka Institute Of Technology
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Nanbu K
Fujitsu Laboratories Ltd.
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Nakata Yoshiaki
Fujitsu Laboratories Limited
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Yano Mitsuaki
Department Of Electrical Engineering School Of Science And Engineering Waseda University
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Taniguchi Kenji
Department Of Biotechnology Tottori University
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Sugiyama Yoshihiro
Fujitsu Laboratories Ltd.
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Kawasaki Motoki
Nanomaterials Microdevices Research Center, Osaka Institute of Technology, 5-16-1 Ohmiya, Asahi-ku, Osaka 535-8585, Japan
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Inoue Tomoyuki
Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Ohmiya, Asahi-ku, Osaka 535-8585, Japan
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Hashimoto Takahito
Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Asahi-ku, Ohmiya, Osaka 535-8585, Japan
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Takagi Daisuke
Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Asahi-ku, Ohmiya, Osaka 535-8585, Japan
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Inoue Tomoyuki
Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Asahi-ku, Ohmiya, Osaka 535-8585, Japan
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Kasai Seiya
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Sapporo 060-8628, Japan
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Sun Yi
Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Osaka 535-8585, Japan
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Kimura Yuta
Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Osaka 535-8585, Japan
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Kasai Seiya
Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-0814, Japan
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Maemoto Toshihiko
Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Osaka 535-8585, Japan
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Nakata Y
Fujitsu Ltd. Atsugi Jpn
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Hirai Hiroshi
Department Of Gerontology Kanazawa Medical University
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KOMIYAMA Susumu
Department of Basic Science, University of Tokyo
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Nishikawa Y
Materials And Devices Research Laboratories Toshiba Corporation
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IWAI Yoshio
Department of Chemical Engineering,Faculty of Engineering,Kyushu University
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YAMAMOTO YOSHITAKA
Department of Molecular Biotechnology, Graduate School of Advanced Sciences of Matter, Hiroshima Uni
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Fujimoto Hiroki
Department Of Chemistry Faculty Of Science Kyoto University
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Matsuoka Toshimasa
Department Of Electronic Engineering Osaka University
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KOBAYASHI Eisuke
Department of Electronics, Faculty of Engineering, Osaka University
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Hirai H
Univ. Tokyo Tokyo Jpn
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Hiyamizu S
Osaka Univ. Osaka Jpn
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FUJIMOTO Hidetoshi
Department of Electronic Engineering,Faculty of Engineering,Osaka University
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IMANISHI Kenji
Department of Electronic Engineering,Faculty of Engineering,Osaka University
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NALAZAWA Takeshi
Department of Electronic Engineering,Faculty of Engineering,Osaka University
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HIYAMIZU Satoshi
Department of Materials Physics,Faculty of Engineering Science,Osaka University
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SASA Sigehiko
Fujitsu Laboratories Limited
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ANDO Hideyasu
Fujitsu Laboratories Ltd.
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Nakata Yoshinori
Microgravity Materials Science Group Institute For Materials And Chemical Process National Institute
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Fujimoto Hidetoshi
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Nakata Y
Fujitsu Laboratories Ltd.
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IZUMIYA Satoshi
Department of Electrical Engineering, Osaka Institute of Technology
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AKAHORI Masato
Department of Electrical Engineering, Osaka Institute of Technology
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KAJIUCHI Atsushi
Department of Electrical Engineering, Osaka Institute of Technology
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ANJIKI Kazutomo
Department of Electrical Engineering, Osaka Institute of Technology
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DOHNO Chiaki
Department of Electrical Engineering, Osaka Institute of Technology
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KOIKE Kazuto
Nanomaterials Microdevices Research Center, Osaka Institute of Technology
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HASHIMOTO Mitsuhiro
Nanomaterials Microdevices Research Center, Osaka Institute of Technology
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TSUJI Kumiho
Nanomaterials Microdevices Research Center, Osaka Institute of Technology
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SEIWA Yasuaki
Nanomaterials Microdevices Research Center, Osaka Institute of Technology
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SASA Shigehiko
Nanomaterials Microdevices Research Center, Osaka Institute of Technology
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KOIKE Kazuto
New Materials Research Center, Osaka Institute of Technology
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HAMA Kenji
New Materials Research Center, Osaka Institute of Technology
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NAKASHIMA Ippei
New Materials Research Center, Osaka Institute of Technology
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SASA Shigehiko
New Materials Research Center, Osaka Institute of Technology
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INOUE Masataka
New Materials Research Center, Osaka Institute of Technology
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YANO Mitsuaki
New Materials Research Center, Osaka Institute of Technology
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TAKADA Gen-you
New Materials Research Center, Osaka Institute of Technology
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OZAKI Masashi
New Materials Research Center, Osaka Institute of Technology
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OGATA Ken-ichi
Bio Venture Center, Osaka Institute of Technology
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KOIKE Kazuto
Bio Venture Center. Osaha Institute of Technology
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LI Shuwei
New Materials Research Center, Osaka Institute of Technology
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KOMAI Hisayoshi
New Materials Research Center, Osaka Institute of Technology
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SASA Shigehiko
Bio Venture Center. Osaha Institute of Technology
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INOUE Masataka
Bio Venture Center. Osaha Institute of Technology
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YANO Mitsuaki
Bio Venture Center. Osaha Institute of Technology
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YANO Mitsuaki
Department of Electrical Engineering, Osaka Institute of Technology
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Li S
New Materials Research Center Osaka Institute Of Technology
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Koike K
Nanomaterials Microdevices Research Center Osaka Institute Of Technology
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Iwai Yoshio
Department Of Chemical Engineering Faculty Of Engineering Kyushu University
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Dohno Chiaki
Department Of Electrical Engineering Osaka Institute Of Technology
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Akahori Masato
Department Of Electrical Engineering Osaka Institute Of Technology
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Imanishi Kenji
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Anjiki Kazutomo
Department Of Electrical Engineering Osaka Institute Of Technology
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SASA Shigehiko
Semiconductor Materials Laboratory,Fujitsu Laboratories,Ltd.
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FUJII Toshio
Semiconductor Materials Laboratory,Fujitsu Laboratories,Ltd.
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Nakazawa T
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Komiyama S
Univ. Tokyo Tokyo Jpn
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Komiyama Susumu
Department Of Basic Science University Of Tokyo
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Tsuji Kumiho
Nanomaterials Microdevices Research Center Osaka Institute Of Technology
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Seiwa Yasuaki
Nanomaterials Microdevices Research Center Osaka Institute Of Technology
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Iwai Yoshio
Department Of Electrical Engineering Osaka Institute Of Technology
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Kobayashi Eisuke
Department Of Electronics Faculty Of Engineering Osaka University
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Koike Kunihiko
Shiga Technology Center Iwatani International Corp
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Nakashima Ippei
New Materials Research Center Osaka Institute Of Technology
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Izumiya Satoshi
Department Of Electrical Engineering Osaka Institute Of Technology
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Takada Gen-you
New Materials Research Center Osaka Institute Of Technology
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Hama Kenji
New Materials Research Center Osaka Institute Of Technology
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Kajiuchi Atsushi
Department Of Electrical Engineering Osaka Institute Of Technology
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Ozaki Masashi
New Materials Research Center Osaka Institute Of Technology
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Koike Kazuto
New Materials Research Center Osaka Institute Of Technology
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Nakazawa Takeshi
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Fujii Toshio
Semiconductor Materials Laboratory Fujitsu Laboratories Ltd.
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Yamamoto Yoshitaka
Department Of Information And Physical Science Graduate School Of Information Science And Technology
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Komai Hisayoshi
New Materials Research Center Osaka Institute Of Technology
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Yamamoto Yoshitaka
Department Of Electrical Engineering Osaka Institute Of Technology
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Sasa Shigehiko
Nanomaterials Microdevices Research Center, Osaka Institute of Technology, 5-16-1 Ohmiya, Asahi-ku, Osaka 535-8585, Japan
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Sasa Shigehiko
Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Asahi-ku, Ohmiya, Osaka 535-8585, Japan
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Sasa Shigehiko
Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Ohmiya, Asahi-ku, Osaka 535-8585, Japan
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Hayafuji Takeo
Nanomaterials Microdevices Research Center, Osaka Institute of Technology, 5-16-1 Ohmiya, Asahi-ku, Osaka 535-8585, Japan
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Takagi Daisuke
Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Ohmiya, Asahi-ku, Osaka 535-8585, Japan
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Hashimoto Takahito
Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Ohmiya, Asahi-ku, Osaka 535-8585, Japan
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Ogata Ken-ichi
Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Asahi-ku, Ohmiya, Osaka 535-8585, Japan
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Matsuoka Toshimasa
Department of Electrical, Electronic and Information Engineering, Osaka University
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Yamamoto Yoshitaka
Department of Electrical and Electronic Engineering, Daido University, Nagoya 457-8530, Japan
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Yano Mitsuaki
Nanomaterials Microdevices Research Center, Osaka Institute of Technology, 5-16-1 Ohmiya, Asahi-ku, Osaka 535-8585, Japan
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Yano Mitsuaki
Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Asahi-ku, Ohmiya, Osaka 535-8585, Japan
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Yano Mitsuaki
Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Ohmiya, Asahi-ku, Osaka 535-8585, Japan
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Fujimoto Hidetoshi
Department of Chemistry, Faculty of Science, Kyoto University
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Koike Kazuto
Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Asahi-ku, Ohmiya, Osaka 535-8585, Japan
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Koike Kazuto
Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Ohmiya, Asahi-ku, Osaka 535-8585, Japan
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Inoue Masataka
Nanomaterials Microdevices Research Center, Osaka Institute of Technology, 5-16-1 Ohmiya, Asahi-ku, Osaka 535-8585, Japan
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Inoue Masataka
Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Asahi-ku, Ohmiya, Osaka 535-8585, Japan
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Inoue Masataka
Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Ohmiya, Asahi-ku, Osaka 535-8585, Japan
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KOBAYASHI Eisuke
Department of Bioengineering, Tokyo Institute of Technology
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Kawasaki Motoki
Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Asahi-ku, Ohmiya, Osaka 535-8585, Japan
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Sasa Shigehiko
Bio Venture Center, Osaka Institute of Technology, Asahi-ku Ohmiya, Osaka 535-8585, Japan
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Yano Mitsuaki
Bio Venture Center, Osaka Institute of Technology, Asahi-ku Ohmiya, Osaka 535-8585, Japan
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Inoue Masataka
Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Osaka 535-8585, Japan
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Inoue Masataka
Bio Venture Center, Osaka Institute of Technology, Asahi-ku Ohmiya, Osaka 535-8585, Japan
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Koike Kazuto
Bio Venture Center, Osaka Institute of Technology, Asahi-ku Ohmiya, Osaka 535-8585, Japan
著作論文
- Piezoelectric Carrier Confinement by Lattice Mismatch at ZnO/Zn_Mg_O Heterointerface
- Temperature Dependence of Electron Mobility in InGaAs/InAlAs Heterostructures
- Photoreflectance and Photoluminescence Study of (GaAs)_m/(AlAs)_5 (m=3-11)Superlattices: Direct and Indirect Transition
- Electronic States in Selectively Si-Doped N-AlGaAs/GaAs/N-AlGaAs Single Quantum Well Structures Grown by MBE
- Improved 2DEG Mobility in Inverted GaAs/n-AlGaAs Heterostructures Grown by MBE
- Electrical Properties of Si-Doped Al_xGa_As Layers Grown by MBE
- Extremely High 2DEG Concentration in Selectively Doped In_Ga_As/N-In_Al_As Heterostructures Grown by MBE
- MBE Growth of High-Quality GaAs Using Triethylgallium as a Gallium Source
- Selectively Doped GaAs/ N-Al_Ga_As Heterostructures Grown by Gas-Source MBE : Semiconductors and Semiconductor Devices
- Novel Nanofabrication Process for InAs/AlGaSb Heterostructures Utilizing Atomic Force Microscope Oxidation
- Coulomb Blockade Observed in InAs/AlGaSb Nanostructures Produced by an Atomic Force Microscope Oxidation Process
- Atomic Force Microscope Nanofabrication of InAs/AlGaSb Heterostructures ( Quantum Dot Structures)
- Characteristics of Polycrystalline ZnO-Based Electrolyte-Solution-Gate Field-Effect Transistors Fabricated on Glass Substrates
- Charge-storage Effect of Vertically Stacked InAs Nanodots Embedded in AI_Ga_As Matrix
- Increased Electron Concentration in InAs/AlGaSb Heterostructures Using a Si Planar Doped Ultrathin InAs Quantum Well
- Quantitative Analysis of the Role of Contacts in the Measurements of Integral Quantum Hall Effects
- A Pseudomorphic In_Ga_As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
- Back-Gated Field Effect in a Double Two-Dimensional Electron Gas Structure
- Si Atomic-Planar-Doping in GaAs Made by Molecular Beam Epitaxy
- A New Heterostructure for 2DEG System with a Si Atomic-Planar-Doped AlAs-GaAs-AlAs Quantum Well Structure Grown by MBE
- Characteristics of Enzyme-Based ZnO/Zn0.7Mg0.3O Heterojunction Field-Effect Transistor as Glucose Sensor
- Performance and Stability of ZnO/ZnMgO Hetero-Metal–Insulator–Semiconductor Field-Effect Transistors
- Ion-Sensitive Characteristics of an Electrolyte-Solution-Gate ZnO/ZnMgO Heterojunction Field-Effect Transistor as a Biosensing Transducer
- Rectification Effects of ZnO-Based Transparent Nanodiodes on Glass and Flexible Plastic Substrates
- Rectification Effects of ZnO-Based Transparent Nanodiodes on Glass and Flexible Plastic Substrates (Special Issue : Microprocesses and Nanotechnology)