ISHIKAWA Tomonori | Fujitsu Laboratories LTD.

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著作論文

Highly Uniform, High-Purity GaAs Epitaxial Layer Grown by MBE Using Triethylgallium and Arsenic : Semiconductors and Semiconductor Devices
GaAs Surface Cleaning with HCl Gas and Hydrogen Mixture for Molecular-Beam-Epitaxial Growth : Semiconductors and Semiconductor Devices
Effect of Thermal Etching on GaAs Substrate in Molecular Beam Epitaxy
Effect of H_2 on the Quality of Si-Doped Al_xGa_As Grown by MBE
The Effect of Annealing on the Electrical Properties of Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE
Electronic States in Selectively Si-Doped N-AlGaAs/GaAs/N-AlGaAs Single Quantum Well Structures Grown by MBE
Improved 2DEG Mobility in Inverted GaAs/n-AlGaAs Heterostructures Grown by MBE
Improved Electron Mobility Higher than 10^6 cm^2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
Implantation into an AlGaAs/GaAs Heterostructure : B-6: III-V DEVICE TECHNOLOGY
Dependence of the Mobility and the Concentration of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-Al_xGa_As Heterostructure on the AlAs Mole Fraction
Electrical Properties of Si-Doped Al_xGa_As Layers Grown by MBE
Influence of MBE Growth Conditions on Persistent Photoconductivily Effects in N-AlGaAs and Selectively Doped GaAs/AlGaAs Heterostructures
A New Heterostructure for 2DEG System with a Si Atomic-Planar-Doped AlAs-GaAs-AlAs Quantum Well Structure Grown by MBE
Formation of DX Centers by Heavy Si Doping in MBE-Grown Al_xGa_As with Low Al Content
Stress-Released MBE Growth on GaAs on Si (001) with a Si-GaAs Superlattice Buffer

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