Stress-Released MBE Growth on GaAs on Si (001) with a Si-GaAs Superlattice Buffer
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概要
- 論文の詳細を見る
We investigated the GaAs heteroepitaxial layers on Si substrates by RHEED, TEM, and wafer warpage measurements. To reduce the tensile stress in thick GaAs heteroepitaxial films, Si-GaAs superlattice buffer layers were introduced pseudomorphically. The tensile stress due to thermal expansion coefficient mismatch balanced with compressive stresses due to lattice constant mismatch.
- 社団法人応用物理学会の論文
- 1989-01-20
著者
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KONDO Kazuo
Fujitsu Laboratories Ltd.
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ISHIKAWA Tomonori
Fujitsu Laboratories LTD.
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Ishikawa Tomonori
Fujitsu Laboratories Limited
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OGASAWARA Kazuto
FUJITSU LABORATORIES LTD.
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Kondo Kazuo
Fujitsu Laboratories Limited
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