Molecular Beam Epitaxial Growth of Stress-released GaAs Layers on Si(001) Substrates : Semiconductors and Semiconductor Devices

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概要

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• The heteroepitaxial growth of GaAs on Si substrates was studied by RHEED, X-ray diffraction, and stress gauge measurements. The conditions for the pseudomorphic growth of GaAs monolayers on Si was determined. The monolayer growth technique was used for the two-step growth of thick GaAs layers on Si substrates. Stress-released 2 μm thick GaAs films were obtained at a growth temperature of about 420℃.

• 社団法人応用物理学会の論文
• 1988-09-20

著者

• KONDO Kazuo

  Fujitsu Laboratories Ltd.

• OGASAWARA Kazuto

  FUJITSU LABORATORIES LTD.

• Kondo Kazuo

  Fujitsu Laboratories Limited

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