Rectification Effects of ZnO-Based Transparent Nanodiodes on Glass and Flexible Plastic Substrates

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概要

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• Self-switching nanodiodes (SSDs) using zinc oxide (ZnO) were fabricated on glass substrates. The SSDs using ZnO have attracted significant attention as transparent devices because of their low cost, abundance in nature, and so on. Rectification characteristics in the SSDs were resemblance to the characteristics of conventional diodes with use of a doping junction or a barrier structure. The changes in characteristics depending on the shape of SSDs were investigated. Channel widths in the SSD of 230 and 190 nm and turn-on voltages of 5 and 8 V were obtained. On the other hand, it was found that the channel length influences the current strength. Moreover, after coating the devices with HfO<inf>2</inf>to enhance the electric field coupling, the rectification behavior was maintained while the device current increased dramatically. The SSDs were fabricated using ZnO on flexible plastic substrates. For channel widths of 250 and 200 nm, turn-on voltages of 4 and 6 V were obtained, respectively. We also obtained clear rectification and observed the dependence of the turn-on voltage on the channel width.

• 2013-06-25

著者

• Inoue Masataka

  Nanomaterials Microdevices Research Center Osaka Institute Of Technology

• Sasa Shigehiko

  Nanomaterials Microdevices Research Center Osaka Institute Of Technology

• Kasai Seiya

  Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Sapporo 060-8628, Japan

• Sun Yi

  Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Osaka 535-8585, Japan

• Kimura Yuta

  Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Osaka 535-8585, Japan

• Kasai Seiya

  Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-0814, Japan

• Inoue Masataka

  Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Osaka 535-8585, Japan

• Maemoto Toshihiko

  Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Osaka 535-8585, Japan

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