Monte Carlo Simulation for Auger Depth Profiling of GaAs/AlAs Superlattice Structure by Ar^+ Ion Sputtering
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-04-15
著者
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Inoue M
Department Of Electrical Engineering Osaka Prefectural Technical College
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Inoue M
Osaka Inst. Technol. Osaka Jpn
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Inoue M
Setsunan Univ. Osaka Jpn
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Lee H‐i
Department Of Applied Physics Faculty Of Engineering Osaka University
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Hofmann S
National Res. Inst. Metals Ibaraki Jpn
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Inoue Masami
Association Of Super-advanced Electronics Technologies (aset)
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Inoue Masahiko
Department Of Neurology Showa University Fujigaoka Hospital
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Inoue M
Assoc. Super‐advanced Electronics Technol. (aset) Yokohama Jpn
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Inoue M
Nanomaterials Microdevices Research Center Osaka Institute Of Technology
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Inoue M
Kyoto Univ. Kyoto Jpn
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Inoue Masumi
Department Of Quantum Engineering Nagoya University
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SHIMIZU Ryuichi
Department of Applied Physics, Osaka University
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LEE Hyung-Ik
Department of Applied Physics, Faculty of Engineering, Osaka University
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KAJIWARA Kazuo
Sony Corporation
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HOFMANN Siegfried
Department of Applied Physics, Faculty of Engineering, Osaka University
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Inoue Masataka
Nanomaterials Microdevices Research Center Osaka Institute Of Technology
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Inoue M
Advanced Technology R&d Center Mitsubishi Electric Corp.
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Hofmann Siegfried
Department Of Applied Physics Faculty Of Engineering Osaka University:(present Address) Max-planck-i
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Lee Hyung-ik
Department Of Applied Physics Faculty Of Engineering Osaka University
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Souda R
National Institute For Research In Inorganic Materials
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Shimizu R
Department Of Information Science Osaka Institute Of Technology
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Shimizu R
Osaka Univ. Osaka Jpn
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Shimizu Ryuichi
Department Of Applied Physics Faculty Of Engineering Osaka University
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Inoue Masahiko
Department Of Applied Physics Faculty Of Engineering Osaka University
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Shimizu Ryuichi
Department Of Applied Physics Faculty Engineering Osaka University
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Shimizu Ryuichi
Department of Information Processing, Osaka Institute of Technology
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