Analysis of Dopant Concentration in Semiconductor Using Secondary Electron Method
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概要
- 論文の詳細を見る
Correlation between the dopant concentration of p-type Si and the work function obtained from the onset of the secondary electron (SE) spectrum was investigated. To measure the slight difference of the onset of the SE spectrum precisely, effects of the distortion of the electrostatic field due to the bias voltage applied to the sample were corrected. The present results have revealed that the measurement of the work function by the SE method is applicable to sputter depth profiling of the dopant concentration in semiconductor devices, using the Auger electron spectroscopy system.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-06-15
著者
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Inoue Masahiko
Department Of Neurology Showa University Fujigaoka Hospital
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Takai Yoshizo
Department Of Applied Physics Faculty Of Engineering Osaka University
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Takai Yoshizo
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Mizuhara Yuzuru
Department Of Applied Physics Graduate School Of Engineering Osaka University
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Mizuhara Yuzuru
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Nagatomi T
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Nagatomi Takaharu
Department Of Applied Physics Osaka University
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Kato Junpei
Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamad
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Kato Junpei
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Inoue Masahiko
Department Of Applied Physics Faculty Of Engineering Osaka University
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