Surface Structure of Sc-O/W(100) System used as Schottky Emitter at High Temperature
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概要
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The surface characterization of the Sc–O/W(100) system was performed by low-energy electron diffraction, Auger electron spectroscopy and work function measurement at 1500 K, the operating temperature of the Sc–O/W(100) emitter. For this, a sample holder with a heater was newly developed. In addition, the differential measurement method was applied to low-energy electron diffraction. The present results reveal that the p($1\times 1$)-Sc–O/W(100) surface having a work function of 3.2 eV is formed by heating at 1700 K.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2004-09-15
著者
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Takai Yoshizo
Department Of Applied Physics Faculty Of Engineering Osaka University
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Iida Shin-ichi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Nagatomi Takaharu
Department Of Applied Physics Osaka University
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Iida Shin-ichi
Department of Material and Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Nakanishi Yousuke
Department of Material and Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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