Cross-Sectional Transmission Electron Microscopic Observation of Etch Hillocks and Etch Pits in LiTaO_3 Single Crystal
スポンサーリンク
概要
- 論文の詳細を見る
Cross sections of etch hillocks and etch pits in LiTaO_3 single crystal have been observed by transmission electron microscopy. The cross-sectional samples were prepared at their exact positions by the focused ion beam microfabrication method. Inverted polarized domains were observed both at the top of etch hillocks and at the bottom of etch pits, indicating that the etching figures originate in the inverted domain formed on the surface. Furthermore, some inverted domains that were pinned by lattice defects were also observed at the inner part of the crystal.
- 社団法人応用物理学会の論文
- 2000-03-15
著者
-
Ueda Tomohiko
Department Of Applied Physics Faculty Of Engineering Osaka University
-
SHIMIZU Ryuichi
Department of Applied Physics, Osaka University
-
TAKAI Yoshizo
Department of Material and Life Sciences, Graduate School of Engineering, Osaka University
-
Souma Makoto
Analytical Technology R&d Laboratory Matsushita Electric Works Limited
-
Matsushima Tomoaki
Advanced Technology Research Laboratory Matsushita Electric Works Ltd.
-
Matsushima Tomoaki
Advanced Technology Research Laboratory Matsushita Electric Works Limited
-
Takai Yoshizo
Department Of Applied Physics Faculty Of Engineering Osaka University
-
Yagyu Hiroyuki
Advanced Technology Research Laboratory Matsushita Electric Works Ltd.
-
Yagyu Hiroyuki
Advanced Technology Research Laboratory Matsushita Electric Works Limited
-
Shimizu Ryuichi
Department Of Applied Physics Faculty Of Engineering Osaka University
-
Shimizu Ryuichi
Department Of Applied Physics Faculty Engineering Osaka University
関連論文
- High Contrast Observation of Magnetic Domain with High Voltage SEM
- Calculation of X-Ray Production in Alloy Targets by New Approach Using Monte Carlo Method
- Anisotropic Emission of Secondary Electrons from Fe(110) Single Crystal
- Monte Carlo Simulation for Auger Depth Profiling of GaAs/AlAs Superlattice Structure by Ar^+ Ion Sputtering
- Auger Depth Profiles of a GaAs/AlAs Superlattice Structure Obtained with O^+_2 and Ar^+ Ion Sputtering
- Preferentially Oriented Crystal Growth in Dynamic Mixing Process : An Approach by Monte Carlo Simulation
- Titanium Nitride Crystal Growth with Preferred Orientation by Dynamic Mixing Method
- Electron Impact Spectra of Mercury in Intermediate Energies
- Spin-Polarization and Differential Cross Section of Electron-Mercury Inelastic Scattering
- Separation of linear and non-linear imaging components in high-resolution transmission electron microscope images
- Monte Carlo Study of X-ray Generation from Film/Substrate Structure by Electron Impact
- Monte Carlo Modeling of Generation of Characteristic, Continuous and Fluorescent X-rays by Electron Impact
- Development of Monte Carlo Simulation of Generation of Continuous and Characteristic X-Rays by Electron Impact (Short Note)
- Fourier analysis of HRTEM image deterioration caused by mechanical vibration
- Nano-area electron diffraction pattern reconstructed from three-dimensional Fourier spectrum
- Real-time observation of spherical aberration-free phase image using high-speed image processing CCD video camera
- Flattening of Surface by Sputter-Etching with Low-Energy Ions : Instrumentation, Measurement, and Fabrication Technology
- Monte Carlo Simulation Study of Backscattered Electron Imaging in a Chemical Vapor Deposition Scanning Electron Microscope
- Monte Carlo Simulation of Generations of Continuous and Characteristic X-Rays by Electron Impact
- Optimization of voltage axis alignment in high-resolution electron microscopy
- Development of a real-time defocus-image modulation processing electron microscope. II. Dynamic observation of spherical aberration-free phase image of surface atoms
- Development of a real-time defocus image modulation processing electron microscope. I. Construction
- TEM Study of the Interface Structure of CVD Diamond Heteroepitaxilly Grown on Pt(111) Substrate
- Preliminary experiments for development of real-time defocus-image modulation processing electron microscope
- Cross-Sectional Transmission Electron Microscope Observation of Isolated Diamond Particles Heteroepitaxially Grown on Pt(111) Substrate
- Observation of Al surface during sputter-cleaning and annealing procedures under UHV-REM
- Microfabricated Submicron Al-Filament Biprism as Applied to Electron Holography : Micro/nanofabrication and Devices
- Microfabricated Submicron Al-Filament Biprism as Applied to Electron Holography
- Extraction of Spherical and Chromatic Aberration -free Information by Focal-depth Extension Processing Under Tilted Illumination
- Interaction Potential between He^+ and Ti in a keV Range as Revealed by a Specialized Technique in Ion Scattering Spectroscopy
- Surface Structure of Zr-O/W(100) System at 1700 K
- Anomaly in Sputtering on Titanium Nitride Film Growth by Post-Irradiation Processing
- Work Function Change Measured by Electron Beam Chopping Technique as Applied to Oxygen-Adsorbed W(100) at High Temperature
- Ion-Assisted Crystal Growth by Post Irradiation as Applied to Nitride Formatiorn
- Study on Zr-Si/W(100) Surface at High Temperatures by Reflection High Energy Electron Diffraction
- Study on Zr-Si/W(100) Surface at High Temperatures by Combined Surface Analysis Techniques
- Monte Carlo Simulation Approach to Sputtering in Multi-Component Targets
- Approximation Formula of Cross-section for the Universal Potential Expression Proposed by Ziegler et al.
- Analysis of Sputtered Neutrals by Nonresonant Multiphoton Ionization. : III. Change of the Velocity Distribution with Time after Sputtering
- Analysis of Sputtered Neutrals by Nonresonant Multiphoton Ionization. : II. A Quantitative Composition Analysis of Cu-Al Alloy
- Analysis of Sputtered Neutrals by Nonresonant Multiphoton Ionization : I. Development of Laser Ion Counting System with a Simple Time-of-Flight Measurement
- Reflection of keV Light Particles from Random Solidsby Modified Single-Collision Model
- A New Bessel-Box Energy Analyzer for Sputtered Neutral Mass Spectrometry
- An Application of Square Wave Modulation Technique to Scanning Auger Electron Microscopy
- Formation of "bcc Boundary Phase" in Transmission Electron Microscopy Samples of Nd-Fe-B Sintered Magnets
- Coercivity and Grain Boundary Morphology in Nd-Fe-B Sintered Magnets
- Auger Study of Preferential Sputtering for Cu-Ni Alloy Sample
- Distortion of Elastically Scattered Electron Energy Spectrum in a Retarding Field Type Spectrometer
- LEED-Work Function Studies on Fe(100)
- Photoelectric Work Function Study on Iron (100) Surface Combined with Auger Electron Spectroscopy
- Continuum X-Ray Generation from W Film on Cu Substrate
- Sputtering of Si with keV Ar^+ Ions : II.Computer Simulation of Sputter Broadening Due to Ion Bombardment in Depth Profiling
- Sputtering of Si with keV Ar^+ Ions. : I. Measurement and Monte Carlo Calculations of Sputtering Yield
- Calculation of Electron Spin Polarization for Polarization Detector
- New Computer Simulation Software of Electron Trajectories for Evaluation of Magnetic Field Immersion-Type Field Emission Gun
- Accumulation Effect of Bombarding N^+_2 Ions in Al for Crystal Growth of AlN Film
- Study of Accumulation Effect of Bombarding N^+_2 Ions on Al Surface by Auger Electron Spectroscopy
- New Neutral- and Ion-Scattering Spectroscopy as Applied to Selective Adsorption of Hydrogen on Cu-Pt Alloy Surfaces
- Comparison of Energy-Loss Functions from Reflection Electron Energy-Loss Spectroscopy Spectra with Surface and Bulk Energy-Loss Functions : in Case of Cu
- Study on the Resolution of the Backscattered Electron Image by the Monte Carlo Method
- Monte Carlo Calculations on Electron Scattering in a Solid Target
- A New Type Edge Effect in High Resolution Scanning Electron Microscopy
- Energy Distribution of Ion-Induced Secondary Electrons from MgO Surface
- Stability of Beam Current of Single Crystal LaB_6 Cathode in High Vacuum
- Field Emission Pattern of LaB_6-Single Crystal Tip
- Improvement in Discharge Delay Time by Accumulating Positive Wall Charges on Cathode MgO Protective Layer Surface in Alternating-Current Plasma Display Panels
- Cross-Sectional Transmission Electron Microscopic Observation of Etch Hillocks and Etch Pits in LiTaO_3 Single Crystal
- Basic Study of Quantitative Ion Scattering Spectroscopy I Correction Factors for Quantification
- Surface and Interface Study of Titanium Nitride on Si Substrate Produced by Dynamic Ion Beam Mixing Method
- Reflectioru High Energy Electron Diffraction Observation of Dynamic Ion Beam Mixing Process in Titanium Nitride Crystal Growth
- Light and Secondary Ion Emissions from Ion Bombarded Solid Surfaces
- The Effect of Ejection Angle in Ion-Beam Sputter Deposition of Superconducting Amorphous Beryllium Film
- Construction of Retarding Field Cylindrical Mirror Analyzer
- Accumulation and Decay Characteristics of Exoelectron Sources at MgO Protective Layer Surface in Alternating-Current Plasma Display Panels
- Anomaly in Sputtering of Aluminum under N^+_2 Ion Bombardment
- Weibull Distribution of X-Ray Pulse-Height
- A Study on Electron Diffusion in X-ray Microanalyzer Specimen
- An Approach for Nanolithography Using Electron Holography
- Selective-Area Repoling of Single-Crystalline LiTaO_3 and Its Characterization
- Nanoprobe cathodoluminescence scanning electron microscope as aplied to synthesized diamond
- Characterization of Sc-O/W(100) Surface as Schottky Emitter : Work Function Change for Activation Processing
- Analysis of Dopant Concentration in Semiconductor Using Secondary Electron Method
- Development of coincidence transmission electron microscope. III. Incorporation with γ-type imaging energy filter
- Observation of Reconstructed Pt(100) Surface by Reflection Electron Microscopy
- Computer Simulation Analysis of the Planar Channeling Effect in Practical Ion Implantation : Semiconductors and Semiconductor Devices
- Cross-sectional High-Resolution Transmission Electron Microscope Study of Heteroepitaxial Diamond Film Grown on Pt Substrate
- Ion Beam Assisted Deposition of Metal Organic Films Using Focused Ion Beams
- Application of the Focused-Ion-Beam Technique for Preparing the Cross-Sectional Sample of Chemical Vapor Deposition Diamond Thin Film for High-Resolution Transmission Electron Microscope Observation
- Cross-sectional image obtained from spherical aberration-free three-dimensional image intensity distribution in transmission electron microscopy
- Practical method to determine the filter shape function used in the three-dimensional Fourier filtering method
- Quantitative analysis of surface atom positions in a thick crystal as determined by a reconstructed exit wave
- Surface Analyzer Combining Secondary Ion Mass Spectrometry and Ion Scattering Spectrometry(速報)
- Direct Observations of the Arrangement of Atoms around Stacking Faults and Twins in Gold Crystals and the Movement of Atoms Accompanying Their Formation and Disappearance
- Energy Distribution of Ion-Induced Secondary Electrons from MgO Surface
- Monte Carlo Study of X-ray Generation from Film/Substrate Structure by Electron Impact
- Extension of Atomic Mixing, Surface Roughness and Information Depth Model for Auger Electron Spectroscopy Sputter-Depth Profile Using Tilted Cylindrical Mirror Analyzer
- Monte Carlo Simulation Study of Backscattered Electron Imaging in a Chemical Vapor Deposition Scanning Electron Microscope
- Monte Carlo Modeling of Generation of Characteristic, Continuous and Fluorescent X-rays by Electron Impact
- Surface Structure of Sc-O/W(100) System used as Schottky Emitter at High Temperature
- Sputter Depth Profiling of Multiple Short-Period BN $\mathbf{\delta}$-Doped Si by Work Function Measurement