Monte Carlo Simulation Study of Backscattered Electron Imaging in a Chemical Vapor Deposition Scanning Electron Microscope
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概要
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A new MC simulation code has been formulated to describe backscattered electron imaging in a chemical vapor deposition scanning electron microscope (CVD-SEM), which we have recently developed for in-situ observation of nucleation and crystal growth of CVD diamond films. This simulation enables us to elucidate the basic mechanism of contrast formation and spatial resolution of the backscattered electron image (BEI) of a diamond film which is synthesized by a microwave plasma in the CVD-SEM@. The result has accurately described the experiment, providing intimate insight into BEI-formation; those electrons that are backscattered to the detector by direct collision with gas molecules do contribute to the increase of the background, attaining $\sim 10$% of the total intensity detected at high gas pressure. The present MC simulation program is also applied for determining the optimum setup for in-situ observation of diamond film growth under CVD-SEM.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2001-05-15
著者
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NISHIKATA Kentaro
Department of Material and Life Science, Graduate School of Engineering, Osaka University
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Takai Yoshizo
Department Of Applied Physics Faculty Of Engineering Osaka University
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Kimura Yoshihide
Department Of Applied Physics Faculty Of Engineering Osaka University
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Nagatomi Takaharu
Department Of Applied Physics Osaka University
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Nishikata Kentaro
Department of Material and Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Yoshida Takeshi
Department of Applied Physics, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Kimura Yoshihide
Department of Material and Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Yoshida Takeshi
Department of Applied Chemistry, Faculty of Engineering, Kanagawa University
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