Selective-Area Repoling of Single-Crystalline LiTaO_3 and Its Characterization

概要

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Selective-area repoling(SARP)of single-crystalline LiTaO_3 has been investigated. SARP is impossible at room temperature, whereas single-domain inversion can occur. At high temperatures, SARP is completed under the applied field of 12kV/mm at 190℃, which is almost the same condition as that required for single-domain inversion. By fitting the SARP current to the Avrami theory, it is deduced that a sidewise growth mechanism is dominant in the process. A few kinds of metal in the electrode and surface contamination can diffuse into LiTaO_3 during SARP and thus affect the charge density and convergence time, i.e., the progress of SARP. Transmission electron microscopy has revealed the domain structure, the lattice defect and the single-domain capping layers that have positive surface charge on both the front and back. Inverted microdomains formed in the capping layer do not easily grow and coalesce into single domains and remain after the SARP process.
社団法人応用物理学会の論文
2000-09-30