Sputter Depth Profiling of Multiple Short-Period BN $\mathbf{\delta}$-Doped Si by Work Function Measurement
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概要
- 論文の詳細を見る
Sputter depth profiling of multiple short-period BN $\delta$-doped Si on the basis of work function (WF) measurement using the secondary electron (SE) method was investigated. The concentration of boron in the sample was confirmed to be less than the detection limit of the current Auger electron spectroscopy system. The results revealed that BN $\delta$-doped layers can be detected as a periodic change in the WF of the order of ${\sim}0.01$ eV. These results confirmed that sputter depth profiling on the basis of WF measurement using the SE method is effective for the characterization of dopant atoms in semiconductor devices with high lateral and depth resolutions.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-08-15
著者
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Takai Yoshizo
Department Of Applied Physics Faculty Of Engineering Osaka University
-
Mizuhara Yuzuru
Department Of Applied Physics Graduate School Of Engineering Osaka University
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Nagatomi Takaharu
Department Of Applied Physics Osaka University
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Bungo Takuya
Department of Material and Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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