Monte Carlo Modeling of Generation of Characteristic, Continuous and Fluorescent X-rays by Electron Impact
スポンサーリンク
概要
- 論文の詳細を見る
A Monte Carlo (MC) simulation to calculate the absolute intensity of an X-ray spectrum generated by electron impact was developed. The X-ray spectrum consists of continuous and characteristic X-rays excited by primary electron, and fluorescent X-rays due to the absorption of the continuous and characteristic X-rays. The comparison of the simulated X-ray spectra with the experimental ones showed excellent agreement for bulk Al, Sc, Ge and Zr. The quantitative investigations of the simulated intensity of the characteristic $K$ peak and the effect of the fluorescent X-ray were performed. It was confirmed that the developed MC simulation is applicable not only for optimizing the design of the rotor-type X-ray source to develop a high-brightness wavelength-tunable X-ray source, but also for quantitative electron probe microanalysis.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-10-15
著者
-
OBORI Ken-ichi
Horiba Ltd.
-
AWATA Syogo
Horiba Ltd.
-
YURUGI Toshikazu
Horiba Ltd.
-
Hibi Takaaki
Department Of Material And Life Science Graduate School Of Engineering Osaka University
-
Takai Yoshizo
Department Of Applied Physics Faculty Of Engineering Osaka University
-
Nagatomi Takaharu
Department Of Applied Physics Osaka University
関連論文
- Separation of linear and non-linear imaging components in high-resolution transmission electron microscope images
- Monte Carlo Study of X-ray Generation from Film/Substrate Structure by Electron Impact
- Monte Carlo Modeling of Generation of Characteristic, Continuous and Fluorescent X-rays by Electron Impact
- Development of Monte Carlo Simulation of Generation of Continuous and Characteristic X-Rays by Electron Impact (Short Note)
- Fourier analysis of HRTEM image deterioration caused by mechanical vibration
- Nano-area electron diffraction pattern reconstructed from three-dimensional Fourier spectrum
- Real-time observation of spherical aberration-free phase image using high-speed image processing CCD video camera
- Flattening of Surface by Sputter-Etching with Low-Energy Ions : Instrumentation, Measurement, and Fabrication Technology
- Monte Carlo Simulation of Generations of Continuous and Characteristic X-Rays by Electron Impact
- Optimization of voltage axis alignment in high-resolution electron microscopy
- Development of a real-time defocus-image modulation processing electron microscope. II. Dynamic observation of spherical aberration-free phase image of surface atoms
- Development of a real-time defocus image modulation processing electron microscope. I. Construction
- TEM Study of the Interface Structure of CVD Diamond Heteroepitaxilly Grown on Pt(111) Substrate
- Preliminary experiments for development of real-time defocus-image modulation processing electron microscope
- Cross-Sectional Transmission Electron Microscope Observation of Isolated Diamond Particles Heteroepitaxially Grown on Pt(111) Substrate
- Observation of Al surface during sputter-cleaning and annealing procedures under UHV-REM
- Extraction of Spherical and Chromatic Aberration -free Information by Focal-depth Extension Processing Under Tilted Illumination
- Continuum X-Ray Generation from W Film on Cu Substrate
- Improvement in Discharge Delay Time by Accumulating Positive Wall Charges on Cathode MgO Protective Layer Surface in Alternating-Current Plasma Display Panels
- Cross-Sectional Transmission Electron Microscopic Observation of Etch Hillocks and Etch Pits in LiTaO_3 Single Crystal
- Accumulation and Decay Characteristics of Exoelectron Sources at MgO Protective Layer Surface in Alternating-Current Plasma Display Panels
- Characterization of Sc-O/W(100) Surface as Schottky Emitter : Work Function Change for Activation Processing
- Analysis of Dopant Concentration in Semiconductor Using Secondary Electron Method
- Development of coincidence transmission electron microscope. III. Incorporation with γ-type imaging energy filter
- Cross-sectional High-Resolution Transmission Electron Microscope Study of Heteroepitaxial Diamond Film Grown on Pt Substrate
- Application of the Focused-Ion-Beam Technique for Preparing the Cross-Sectional Sample of Chemical Vapor Deposition Diamond Thin Film for High-Resolution Transmission Electron Microscope Observation
- Surface Excitations in Surface Electron Spectroscopies Studied by Reflection Electron Energy-Loss Spectroscopy and Elastic Peak Electron Spectroscopy
- Cross-sectional image obtained from spherical aberration-free three-dimensional image intensity distribution in transmission electron microscopy
- Practical method to determine the filter shape function used in the three-dimensional Fourier filtering method
- Quantitative analysis of surface atom positions in a thick crystal as determined by a reconstructed exit wave
- Angular Distributions of Sputtered Particles Ejected from Pure Cu, Pt and Cu -Pt Alloy under 3 keV Ar^+ Ton Bombardment
- Monte Carlo Simulation of Generations of Continuous and Characteristic X-Rays by Electron Impact
- Direct Observations of the Arrangement of Atoms around Stacking Faults and Twins in Gold Crystals and the Movement of Atoms Accompanying Their Formation and Disappearance
- Energy Distribution of Ion-Induced Secondary Electrons from MgO Surface
- Monte Carlo Study of X-ray Generation from Film/Substrate Structure by Electron Impact
- Extension of Atomic Mixing, Surface Roughness and Information Depth Model for Auger Electron Spectroscopy Sputter-Depth Profile Using Tilted Cylindrical Mirror Analyzer
- Monte Carlo Simulation Study of Backscattered Electron Imaging in a Chemical Vapor Deposition Scanning Electron Microscope
- Monte Carlo Modeling of Generation of Characteristic, Continuous and Fluorescent X-rays by Electron Impact
- Surface Structure of Sc-O/W(100) System used as Schottky Emitter at High Temperature
- Sputter Depth Profiling of Multiple Short-Period BN $\mathbf{\delta}$-Doped Si by Work Function Measurement