Surface and Interface Study of Titanium Nitride on Si Substrate Produced by Dynamic Ion Beam Mixing Method
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概要
- 論文の詳細を見る
Crystal growth of TiN on Si substrate under dynamic ion beam mixing (DIBM) processing was monitored by reflection high-energy electron diffraction (RHEED) and the interface was studied by transmission electron microscope (TEM). The TEM observation has revealed that the intermixed layer between the Si substrate and TiN film is composed of three different types of sublayers. The thicknesses of the first and the second sublayers were same as 〜7-8 nm and 〜3-4 nm, respectively, independent of different arrival ratios of Ti/N. The thickness of the third layer, however, was 〜6 nm for the arrival ratio of nearly unity whereas it was 〜14 nm for the arrival ratio greater than unity. Characterization of these sublayers with a field-emission analytical electron microscope (AEM) has revealed that these three sublayers are of an amorphous structure, composed of a mixture of Si and N, of a mixture of Si, N and small amount of recoil-implanted Ti, and of a mixture of Si, N, and Ti, for the 1st, 2nd and 3rd sublayers, respectively. TIN (001) is epitaxially grown on Si (001) along the incident direction of nitrogen ions even though the intermixed layer exists inbetween the TiN film and Si substrate.
- 社団法人応用物理学会の論文
- 1994-04-15
著者
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Min K‐y
Department Of Applied Physics Osaka University
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SHIMIZU Ryuichi
Department of Applied Physics, Osaka University
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KIUCHI Masato
Government Industrial Research Institute
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BEAG Young
Department of Applied Physics, Osaka University
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MIN Kyung-Youl
Department of Applied Physics, Faculty of Engineering, Osaka University
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TARUTANI Masayoshi
Department of Applied Physics, Faculty of Engineering, Osaka University
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Beag Y
Department Of Applied Physics Graduate School Of Engineering Osaka University
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Beag Young
Department Of Applied Physics Osaka University
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Souda R
National Institute For Research In Inorganic Materials
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Kiuchi M
National Inst. Advanced Industrial Sci. And Technol. Osaka Jpn
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Min Kyung-youl
Department Of Applied Physics Osaka University
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Shimizu R
Department Of Information Science Osaka Institute Of Technology
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Shimizu R
Osaka Univ. Osaka Jpn
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Shimizu Ryuichi
Department Of Applied Physics Faculty Of Engineering Osaka University
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Tarutani Masayoshi
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Shimizu Ryuichi
Department Of Applied Physics Faculty Engineering Osaka University
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Shimizu Ryuichi
Department of Information Processing, Osaka Institute of Technology
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