Formation of Crystalline SiC Buried Layer by High-Dose Implantation of MeV Carbon Ions at High Temperature

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1993-09-01

著者

• Horino Y

  Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist)

• CHAYAHARA Akiyoshi

  Government Industrial Research Institute

• KIUCHI Masato

  Government Industrial Research Institute

• HORINO Yuji

  Government Industrial Research Institute

• FUJII Kanenaga

  Government Industrial Research Institute

• HORINO Yuji

  National Institute of Advanced Industrial Science and Technology

• CHAYAHARA Akiyoshi

  Laboratory of Purified Materials, National Institute of Advanced Industrial Science and Technology

• MOKUNO Yoshiaki

  Laboratory of Purified Materials, National Institute of Advanced Industrial Science and Technology

• KINOMURA Atsushi

  National Institute of Advanced Industrial Science and Technology

• KINOMURA Atsushi

  Government Industrial Research Institute Osaka

• MOKUNO Yoshiaki

  Government Industrial Research Institute Osaka

• Horiba Yasutaka

  System Lsi Laboratory Mitsubishi Electric Corporation

• Chayahara Akiyoshi

  Department Of Electrical Engineering Hiroshima University

• Chayahara Akiyoshi

  Government Industrial Research Institute Osaka

• Hirano Y

  Advanced Device Development Dept. Renesas Technology Corp.

• Kiuchi M

  National Inst. Advanced Industrial Sci. And Technol. Osaka Jpn

• Horino Yuji

  National Inst. Of Advanced Industrial Sci. And Technol. Kansai Osaka Jpn

• Kinomura A

  National Institute Of Advanced Industrial Science And Technology

• Mokuno Y

  Laboratory Of Purified Materials National Institute Of Advanced Industrial Science And Technology

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