A Sub 1-V L-Band Low Noise Amplifier SOI CMOS(Special Section on Analog Circuit Techniques and Related Topics)

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概要

• 論文の詳細を見る

• This paper describes a sub 1-V low noise amplifier(LNA)fabricated using a 0.35μm SOI(silicon on insulator)CMOS process.The SOI devices have high speed performance even at low operating voltage(below 1V)because of their smaller parasitic capacitance at source and drain than those of bulk MOSs.A body of a MOSFET can be controlled by using a field shield(FS)plate.The transistor body of the LNA is connected to its gate.The threshold voltage of the transistor becomes lower due to the body-biased effect so that a large drain current keeps the gain high, and active-body control improves the 1-dB gain compression point.A gain of 7.0dB and a Noise Figure(NF)of 3.6dB are obtained at 1.0V and 1.9GHz.The output power at the 1-dB gain compression point is +1.5dBm.The gain and the output power at the 1-dB gain compression point are higher by 1.2dB and 2.9dB respectively than those of a conventionally body-fixed LNA.A 5.5dB gain is also obtained at the supply voltage of 0.5V.

• 社団法人電子情報通信学会の論文
• 2000-02-25

著者

• YAMAGUCHI Yasuo

  Institute for Materials Research, Tohoku University

• Sato Hiromi

  Riken

• Yamaguchi Y

  Tohoku Univ. Sendai

• Yamaguchi Y

  Kumamoto Techno Res. Park Kumamoto Jpn

• YAMAGUCHI Yasuo

  ULSI Laboratory, Mitsubishi Electric Corporation

• KOMURASAKI Hiroshi

  System LSI Division, Mitsubishi Electric Corporation

• SATO Hisayasu

  System LSI Development Center, Mitsubishi Electric Corporation

• YAMAMOTO Kazuya

  System LSI Development Center, Mitsubishi Electric Corporation

• UEDA Kimio

  System LSI Development Center, Mitsubishi Electric Corporation

• MAEDA Shigenobu

  ULSI Development Center, Mitsubishi Electric Corporation

• SASAKI Nagisa

  System LSI Division, Mitsubishi Electric Corporation

• MIKI Takahiro

  System LSI Division, Mitsubishi Electric Corporation

• HORIBA Yasutaka

  Semiconductor Group, Mitsubishi Electric Corporation

• Sato H

  Riken

• Horino Y

  Advanced Device Development Dept. Renesas Technology Corp.

• Ueda K

  Mitsubishi Electric Corp. Itami‐shi Jpn

• Ueda Kimio

  System Lsi Development Center Mitsubishi Electric Corp.

• Saito H

  Information Technology R Amp D Center Mitsubishi Electric Corporation

• Maegawa Shigeto

  Advanced Device Development Dept. Renesas Technology Corp.

• HORIBA Yasutaka

  The authors are with Kita-Itami Works, Mitsubishi Electric Corporation

• Yamaguchi Y

  Central Workshop Osaka University

• Ueda K

  System Lsi Laboratory Mitsubishi Electric Corporation

• Yamamoto Kazuya

  System Lsi Development Center Mitsubishi Electric Corporation

• Horiba Yasutaka

  Lsi Laboratory Mitsubishi Electric Corporation

• Horiba Yasutaka

  The Authors Are With Kita-itami Works Mitsubishi Electric Corporation

• Horiba Yasutaka

  System Lsi Laboratory Mitsubishi Electric Corporation

• Maeda Shigenobu

  Ulsi Development Center Mitsubishi Electric Corporation

• Yamamoto K

  Renesas Technology Corp.

• Ueda K

  Ntt Atsugi‐shi Jpn

• Komurasaki Hiroshi

  System Lsi Division Mitsubishi Electric Corporation

• Miki Takahiro

  System Lsi Division Mitsubishi Electric Corporation

• Miki T

  Faculty Of Education Gunma University

• Sasaki Nagisa

  System Lsi Division Mitsubishi Electric Corporation

• Ueda Katsuhiko

  Department Of Information Engineering Nara National College Of Technology

• Shibata H

  System Lsi Development Center Mitsubishi Electric Corporation

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