Analyses of the Radiation-Caused Characteristics Change in SOI MOSFETs Using Field Shield Isolation

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-04-30

著者

• YAMAGUCHI Yasuo

  Institute for Materials Research, Tohoku University

• Yamaguchi Y

  Tohoku Univ. Sendai

• Yamaguchi Y

  Kumamoto Techno Res. Park Kumamoto Jpn

• IWAMATSU Toshiaki

  ULSI Laboratory, Mitsubishi Electric Corporation

• YAMAGUCHI Yasuo

  ULSI Laboratory, Mitsubishi Electric Corporation

• MAEGAWA Shigeto

  ULSI Laboratory, Mitsubishi Electric Corporation

• NISHIMURA Tadashi

  ULSI Laboratory, Mitsubishi Electric Corporation

• MAEDA Shigenobu

  ULSI Development Center, Mitsubishi Electric Corporation

• HIRANO Yuuichi

  ULSI Development Center, Mitsubishi Electric Corporation

• FERNANDEZ Warren

  ULSI Development Center, Mitsubishi Electric Corporation

• Horino Y

  Advanced Device Development Dept. Renesas Technology Corp.

• IWAMATSU Toshiaki

  Advanced Device Development Dept., Renesas Technology Corp.

• Maegawa Shigeto

  Advanced Device Development Dept. Renesas Technology Corp.

• Yamaguchi Y

  Central Workshop Osaka University

• Maegawa Shigeto

  Ulsi Development Center Mitsubishi Electric Corporation

• HIRANO Yoichi

  National Institute of Advanced Industrial Science and Technology (AIST)

• Horiba Yasutaka

  System Lsi Laboratory Mitsubishi Electric Corporation

• Maeda Shigenobu

  Ulsi Development Center Mitsubishi Electric Corporation

• Nishimura Tadashi

  The Ulsi Development Center Mitsubishi Electric Corporation

• Nishimura Tadashi

  Ulsi Research And Development Center Mitsubishi Electric Corporation

• Iwamatsu Toshiaki

  Advanced Device Development Dept. Renesas Technology Corp.

• Hirano Y

  Advanced Device Development Dept. Renesas Technology Corp.

• Fernandez Warren

  Ulsi Development Center Mitsubishi Electric Corporation

• Nishimura Tadashi

  Ulsi Development Center Mitsubishi Electric Corporation

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