Hot Carrier Evaluation of TFT by Emission Microscopy (Special Issue on Quarter Micron Si Device and Process Technologies)
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概要
- 論文の詳細を見る
A new evaluation technique of hot carrier degradation is proposed and applied to practical evaluation of p-channel polycrystalline silicon thin film transistors (TFT). The proposed technique introduces emission microscopy which is particularly effective for evaluating TFT devices. We have developed an automatic measurement system in which measurement of the electrical characteristics and monitoring the photo emission are done simultaneously. Using this system, we have identified the dominant mechanism of hot carrier degradation in TFTs, and evaluated the effect of plasma hydrogenation on hot carrier degradation.
- 社団法人電子情報通信学会の論文
- 1994-03-25
著者
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MAEDA Shigenobu
ULSI Development Center, Mitsubishi Electric Corporation
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Maeda Shigenobu
Ulsi Development Center Mitsubishi Electric Corporation
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Maeda Shigenobu
Ulsi Laboratory Mitsubishi Electric Corporation
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MITSUHASHI Jun-ichi
ULSI Laboratory, Evaluation amp Analysis Center, Mitsubishi Electric Corporation
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Komori Junko
ULSI Laboratory, Mitsubishi Electric Corporation
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Mitsuhashi Jun-ichi
Ulsi Laboratory Mitsubishi Electric Corporation
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Komori J
Mitsubishi Electric Corp. Hyogo Jpn
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Komori Junko
Ulsi Development Center Mitsubishi Electric Corp
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