Reliability Evaluation of Thin Gate Oxide Using a Flat Capacitor Test Structure (Special Issue on Microelectronic Test Structure)

概要

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A test structure has been developed with very low-level current measurement technique and is used to evaluate a very small change of leakage current caused by the trapping and detrapping of electrons or holes. The present technique realizes detection of very low levels of leakage current (minimum detectable current is 5×10lt-17gt A), which is necessary in the course of evaluating gate oxides. This technique is very useful for the evaluation of retention characteristics and stress induced degradation of gate oxides.
社団法人電子情報通信学会の論文
1996-02-25