Formation Mechanisms of the Deformed Oxide Layer in a Tungsten Polycide Structure

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概要

• 論文の詳細を見る

• Destructive oxidation mechanisms in a tungsten polycide structure were investigated. In the experiments, the dependencies of the variation in the process flow, structural variations and annealing temperature application on the formation of destructive oxidation were examined. Surface and structural analyses were performed using a variety of analytical techniques such as transmission electron microscopy. The deformed oxide layer, having a pathological morphology of the oxide surface, was formed on the silicide layer during the oxide process after the removal of the surface layer of silicon oxide that initially covered the crystallized silicide film. It was revealed that destructive oxidation resulted from the formation of volatile metal-oxides, which originated during the process of low temperature annealing in ambient O2.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1996-02-15

著者

• Fukumoto Koji

  Ulsi Lab. Mitsubishi Electric Co.

• Mashiko Yoji

  Ulsi Development Center Mitsubishi Electric Corp

• Mashiko Yoji

  ULSI Lab., Mitsubishi Electric Co., 4-1 Mizuhara, Itami, Hyogo 664, Japan

• Okamoto Tatsuo

  Kitaitami Works, Mitsubishi Electric Co., 4-1 Mizuhara, Itami, Hyogo 664, Japan

• Ohsaki Akihiko

  ULSI Lab., Mitsubishi Electric Co., 4-1 Mizuhara, Itami, Hyogo 664, Japan

• Koyama Hirosi

  ULSI Lab., Mitsubishi Electric Co., 4-1 Mizuhara, Itami, Hyogo 664, Japan

• Fukumoto Koji

  ULSI Lab., Mitsubishi Electric Co., 4-1 Mizuhara, Itami, Hyogo 664, Japan

関連論文

• Reliability Evaluation of Thin Gate Oxide Using a Flat Capacitor Test Structure (Special Issue on Microelectronic Test Structure)
• Effect of Ultrathin Top Silicon Layers on the X-Ray Photoelectron Emission from the Buried Oxide in Silicon-on-Insulator Wafers
• Accurate Thickness Determination of Both Thin SiO_2 on Si and Thin Si on SiO_2 by Angle-Resolved X-Ray Photoelectron Spectroscopy
• Elimination of X-Ray Photoelectron Diffraction Effect of Si(100) for Accurate Determination of SiO_2 Overlayer Thickness
• Kikuchi-Band Analysis of X-Ray Photoelectron Diffraction Fine Structure of Si(100) by Precise Angle-Resolved X-Ray Photoelectron Spectroscopy
• Evaluatlon of Siliclde Morphology by Near-Infrared-Laser Optical-Beam-Induced-Current Technique : Optics and Quantum Electronics
• A Study of Metal Impurities Behavior due to Difference in Isolation Structure on ULSI Devices
• Formation Mechanisms of the Deformed Oxide Layer in a Tungsten Polycide Structure
• Kikuchi-Band Analysis of X-Ray Photoelectron Diffraction Fine Structure of Si(100) by Precise Angle-Resolved X-Ray Photoelectron Spectroscopy

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