Kikuchi-Band Analysis of X-Ray Photoelectron Diffraction Fine Structure of Si(100) by Precise Angle-Resolved X-Ray Photoelectron Spectroscopy
スポンサーリンク
概要
- 論文の詳細を見る
X-ray photoelectron diffraction fine structure of Si(100) is studied with precise angle-resolved X-ray photoelectron spectroscopy. Polar-angle intensity distributions of the Si 2p photoelectron emission excited by Al Kα X-rays are measured from H-terminated Si(100) along some azimuthal angles, and are qualitatively interpreted using both forward-focusing peaks along zone axes and Kikuchi bands associated with planes of low indices ({220}, {400}, {111} and {311}). To confirm the interpretation experimentally, we prepare ultrathin Si(100) layers on SiO2 from silicon-on-insulator (SOI) wafers. The thicknesses of the ultrathin Si(100) layers are adjusted so that the SOI layer is thick enough to exhibit the forward-focusing peak along [100] but slightly thinner than the thickness in which the contribution of the Kikuchi pattern weakens. It is observed experimentally, for the first time, that the intensities of X-ray photoelectron diffraction fine structure due to Kikuchi lines decreases for such ultrathin Si(100), while the forward-focusing peak remains unchanged, as expected from our interpretation.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1999-03-15
著者
-
Umeno Masataka
Graduate School Of Engineering Osaka University
-
Mashiko Yoji
Ulsi Development Center Mitsubishi Electric Corp
-
Yamamoto Hidekazu
Ulsi Development Center Mitsubishi Electric Corporation
-
Koyama Hiroshi
Ulsi Development Center Mitsubishi Electric Corporation:(present Address)jeol Limited
-
Kawazu Satoru
Department of Electronic and Photonic Systems Engineering, Kochi University of Technology, Tosayamada, Kochi 782-0003, Japan
-
Katayama Toshiharu
ULSI Development Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
-
Umeno Masataka
Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
-
Koyama Hiroshi
ULSI Development Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
関連論文
- Structural Comparison between Ge and GaAs Films Grown by Molecular Beam Epitaxy on Si Substrate : Short Note
- Direct Bonding of Epitaxial GaAs Film on Si Substrate With Improved Optical Properties : Structure and Mechanical and Thermal Properties of Condensed Matter
- Boron-Incorporated Amorphous Carbon Films Deposited by Pulsed Laser Deposition : Semiconductors
- Effect of Radio Frequency Power on the Properties of Hydrogenated Amorphous Carbon Films Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition
- Theoretical Studies on Hole Transport and the Effective Hall Factor in Cubic Phase of p-Type GaN
- Thermal Stress Relaxation in GaAs Layer on New Thin Si Layer over Porous Si Substrate Grown by Metalorganic Chemical Vapor Deposition
- Annealing Temperature Effects on Synthesis of n-TiO_2/dye/p-CuI Solid-State Solar Cells
- The Deposition of a-C : H Films by Pulsed Laser Ablation
- Formation of Thin Oxide Films on Room-Temperature Silicon (100) by Exposure to a Neutral Beam of Hyperthermal Atomic and Molecular Oxygen
- Disk-Shaped Stacked Capacitor Cell for 256 Mb Dynamic Random-Access Memory
- Oxidation Properties of Hydrogen-Terminated SI (001) Surfaces Following Use of a Hyperthermal Broad Atomic Oxygen Beam at Low Temperatures : Instrumentation, Measurement, and Fabrication Technology
- Suppression of GaInN/GaN Multi-Quantum-Well Decomposition during Growth of Light-Emitting-Diode Structure : Structure and Mechanical and Thermal Properties of Condensed Matter
- Surface Reaction of a Low-Flux Atomic Oxygen Beam with a Spin-Coated Polymide Film : Synergetic Effect of Atomic Oxygen and Ultraviolet Exposures
- Realization of GaAS/AlGaAs Lasers on Si Substrates Using Epitaxial Lateral Overgrowth by Metalorganic Chemical Vapor Deposition : Optics and Quantum Electronics
- First Room-Temperature Continuous-Wave Operation of Self-Formed InGaAs Quantum Dot-Like Laser on Si substrate Grown by Metalorganic Chemical Vapor Deposition
- AlGaAs/GaAs Laser Diodes with GaAs Islands Active Region on a Si Substrate with Higher Characteristic Temperature
- Simulation of Dopant Redistribution During Gate Oxidation Including Transient-Enhanced Diffusion Caused by Implantation Damage
- Passivation of Bulk and Surface Defects in GaAs Grown on Si Substrate by Radio Frequency Phosphine/Hydrogen Plasma Exposure : Semiconductors
- Reliability Evaluation of Thin Gate Oxide Using a Flat Capacitor Test Structure (Special Issue on Microelectronic Test Structure)
- Mechanical Property Characterization of Boron-Doped Silicon by Berkovich-Type Indenter : Semiconductors
- Characteristics of GaN MESFET Grown on Sapphire Substrate by MOCVD
- High-Temperature Behaviors of GaN Schottky Barrier Diode
- Effect of Ultrathin Top Silicon Layers on the X-Ray Photoelectron Emission from the Buried Oxide in Silicon-on-Insulator Wafers
- Accurate Thickness Determination of Both Thin SiO_2 on Si and Thin Si on SiO_2 by Angle-Resolved X-Ray Photoelectron Spectroscopy
- Elimination of X-Ray Photoelectron Diffraction Effect of Si(100) for Accurate Determination of SiO_2 Overlayer Thickness
- Kikuchi-Band Analysis of X-Ray Photoelectron Diffraction Fine Structure of Si(100) by Precise Angle-Resolved X-Ray Photoelectron Spectroscopy
- Back-Illuminated GaN Metal-Semiconductor-Metal UV Photodetector With High Internal Gain : Semiconductors
- Recessed Gate AlGaN/GaN HEMT on Sapphire Grown by MOCVD
- Investigations on Strained AlGaN/GaN/Sapphire and GaInN Multi-Quantum-Well Surface LEDs Using AlGaN/GaN Bragg Reflectors(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
- Electrical Characteristics of Schottky Contacts on GaN and Al_Ga_N
- High-Mobility AlGaN/GaN Heterostructures Grown on Sapphire by Metal-Organic Chemical Vapor Deposition
- Optical Absorption and Photoluminescence Studies of n-type GaN
- Photoluminescence Studies of Hydrogen-Passivated Al_Ga_As Grown on Si Substrate by Metalorganic Chemical Vapor Deposition
- GaN on Si Substrate with AlGaN/AlN Intermediate Layer
- Effects of H Plasma Passivation on the Optical and Electrical Properties of GaAs-on-Si
- High-Quality InGaN Light Emitting Diode Grown on GaN/AlGaN Distributed Bragg Reflector
- Characteristics of a GaN Metal Semiconductor Field-Effect Transistor Grown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition
- Test Structure for the Evaluation of Si Substrates (Special Issue on Microelectronic Test Structure)
- Investigation of Electrical and Optical Properties of Phosphine/Hydrogen-Plasma-Exposed In_Ga_P Grown on Si SubStrate : Semiconductors
- Electrical Characteristics of GaAs Bonded to Si Using SeS_2 Technique
- Low Temperature Growth of GaAs on Si Substrate by Chemical Beam Epitaxy
- Hydrogen Plasma Passivation and Improvement of the Photovoltaic Properties of a GaAs Solar Cell Grown on Si Substrate
- Surface and Bulk Passivation effect of GaAs grown on Si Substrates by SeS_2Treatment
- Evaluatlon of Siliclde Morphology by Near-Infrared-Laser Optical-Beam-Induced-Current Technique : Optics and Quantum Electronics
- Optical Absorption and Electrical Conductivity of Amorphous Carbon Thin Films from Camphor : A Natural Source
- Field Acceleration Model for Time-Dependent Dielectric Breakdown
- A Study of Metal Impurities Behavior due to Difference in Isolation Structure on ULSI Devices
- Formation Mechanisms of the Deformed Oxide Layer in a Tungsten Polycide Structure
- Kikuchi-Band Analysis of X-Ray Photoelectron Diffraction Fine Structure of Si(100) by Precise Angle-Resolved X-Ray Photoelectron Spectroscopy