A Study of Metal Impurities Behavior due to Difference in Isolation Structure on ULSI Devices

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概要

• 論文の詳細を見る

• We have studied the behavior of metal impurities such as Cu and Ni with different isolation techniques in ULSI devices. We have found by using convergent beam electron diffraction (CBED) that the stress in a shallow trench isolation (STI) structure is larger than that of a local-oxidation-of-silicon (LOCOS) structure. With LOCOS, the highly doped substrate efficiently gettered Cu. However, with STI, a small amount of Cu diffused to the device area because of the high stress. On the other hand, high density of bulk micro defect (BMD) generated with the thermal processing of STI effectively getters Ni impurities. With the LOCOS-based wafer, a large amount of Ni diffuses to the device region because of the low BMD density.

• 社団法人応用物理学会の論文
• 2002-10-15

著者

• Mashiko Yoji

  Ulsi Development Center Mitsubishi Electric Corporation

• Yamamoto Hidekazu

  ULSI Development Center, Mitsubishi Electric Corporation

• Mashiko Yoji

  Ulsi Development Center Mitsubishi Electric Corp

• MATSUKAWA Kazuhito

  ULSI Development Center, Mitsubishi Electric Corporation

• Yamamoto Hidekazu

  Ulsi Development Center Mitsubishi Electric Corporation

• Matsukawa Kazuhito

  Ulsi Development Center Mitsubishi Electric Corporation

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