Test Structure for the Evaluation of Si Substrates (Special Issue on Microelectronic Test Structure)

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概要

• 論文の詳細を見る

• The quality of Si substrates affecting the oxide reliability was investigated using various kinds of test structures like flat capacitor, field edge array and gate edge array. The field edge array test structure which resembles the conditions found for real device is shown to be quite effective to determine the quality of oxides. Oxide grown on a P type epitaxial layer on P^+ silicon substrate shows the highest reliability in all test structures. Gettering of heavy metals and/or crystal defects by the P^+ silicon substrate is the dominant mechanism for the improvement of the oxide reliability. H_2 annealed silicon shows a good reliability if monitored using the flat capacitor. However, using the field edge array test structure, which is strongly influenced by real device process, the reliability of the oxide grown on H_2 annealed silicon degrades.

• 社団法人電子情報通信学会の論文
• 1996-02-25

著者

• KIMURA Mutsumi

  Ryukoku University

• Kimura Mutsumi

  Ryukoku University:innovative Materials And Processing Research Center

• Yoshisato Yorinobu

  Tsukuba Research Center Sanyo Electric Co. Ltd.

• Yoshisato Yorinobu

  Functional Materials Research Center Sanyo Electric Co. Ltd.

• Kimura M

  Department Of Electrical Engineering Kure National College Of Technology

• Koyama H

  Mitsubishi Electric Corp. Hyogo Jpn

• KOYAMA Hiroshi

  ULSI Laboratory, Evaluation amp Analysis Center, Mitsubishi Electric Corporation

• Kimura Mikihiro

  Ulsi Laboratory Mitsubishi Electric Corporation

• Yamamoto Hidekazu

  ULSI Development Center, Mitsubishi Electric Corporation

• YOSHIDA Yoshiko

  ULSI Laboratory, Mitsubishi Electric Corp.

• KUME Morihiko

  ULSI Laboratory, Mitsubishi Electric Corp.

• Kume Morihiko

  Ulsi Laboratory Mitsubishi Electric Corp.

• Yoshida Y

  Yamaguchi Univ. Ube‐shi Jpn

• Yamamoto H

  Toshiba Corp. Kawasaki‐shi Jpn

• Kimura Mutsumi

  Ryukoku Univ. Otsu‐shi Jpn

• Yamamoto Hidekazu

  Ulsi Development Center Mitsubishi Electric Corporation

• Koyama Hiroshi

  Ulsi Development Center Mitsubishi Electric Corporation:(present Address)jeol Limited

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