Epitaxial Growth of Ba_<1-x>K_xBiO_3 Thin Films by High-Pressure Reactive RF-Magnetron Sputtering
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概要
- 論文の詳細を見る
Epitaxial growth of Ba_<1-x>K_xBiO_3 (110) thin films has been carried out on SrTiO_3 (110) substrates using reactive rf-magnetron sputtering for the first time under a 80 Pa discharge gas which is of a rather higher pressure than is usual. Electrical measurements showed that T_c of as-grown films was 16 K. A preferred orientation of (110) and epitaxial growth of the Ba-K-Bi-O film on the substrates were confirmed by XRD (X-ray diffraction) and RHEED (reflection high-energy electron diffraction), respectively.
- 社団法人応用物理学会の論文
- 1991-08-15
著者
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Usuki T
Sanyo Electric Co. Ltd. Osaka Jpn
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Usuki T
New Materials Research Center Sanyo Electric Co. Ltd.
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Usuki Tatsuro
New Materials Research Center Sanyo Electric Co. Ltd.
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Nakano Shoichi
Department Of Physiology Tokai University School Of Medicine
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Nakano Shoichi
Sanyo Electric Co. Ltd.
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Nakano Shoichi
Functional Materials Research Center Sanyo Electric Co. Ltd.
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IYORI Masahiro
Tsukuba Research Center, SANYO Electric Co., Ltd.
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IYORI Masahiro
Functional Materials Research Center, SANYO Electric Co., Ltd.
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TAKAHASHI Kazuhiko
Functional Materials Research Center, SANYO Electric Co., Ltd.
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USUKI Tatsuro
Functional Materials Research Center, SANYO Electric Co., Ltd.
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Takahashi Kazuhiko
Tsukuba Research Center Sanyo Electric Co. Ltd.
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Yoshisato Yorinobu
Tsukuba Research Center Sanyo Electric Co. Ltd.
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Yoshisato Yorinobu
Functional Materials Research Center Sanyo Electric Co. Ltd.
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Takahashi K
Japan Atomic Energy Agency
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Kamino M
Sanyo Electric Co. Ltd. Osaka
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Iyori Masahiro
Tsukuba Research Center Sanyo Electric Co. Ltd.
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Yoshida Y
Yamaguchi Univ. Ube‐shi Jpn
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Kamino Maruo
Functional Materials Research Center Sanyo Electric Co. Ltd.
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