Dynamics of Surface Photovoltage Effects on Clean and Negative Electron Affinity Surfaces of p-GaAs (100)
スポンサーリンク
概要
- 論文の詳細を見る
Core-level photoelectron spectroscopy with the combination of synchrotron radiation and laser light was used for exploring the dynamics of the surface photovoltage (SPY) effect on a p-GaAs (100). It was found that a temporal profile of the SPV is very different in microsecond range between room temperature and 90K. The results can be explained with the recombination of photoexciled carriers via thermionic and tunneling processes. The SPV effects and its temporal profiles on the negative electron-affinity (NEA) surface were also studied. It was observed that the SPV effect is suppressed on the NEA surface, which may be due to the escape process of the photoexcited carriers.
- 社団法人日本物理学会の論文
- 2003-03-15
著者
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Takanashi K
Institute For Solid State Physics University Of Tokyo:the Research Institute For Iron Steel And Othe
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TAKAHASHI Kazutoshi
UVSOR Facility, Institute of Molecular Science, Okazaki National Institutes
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More Sam
Uvsor Facility Institute For Molecular Science
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Kamada M
Tokyo Inst. Of Technol. Tokyo
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Kamada Masao
Synchrotron Light Application Center Saga University
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Kamada Masao
Synchrotornlight Application Center Saga University
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Takahashi Kazuhiko
Tsukuba Research Center Sanyo Electric Co. Ltd.
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Takahashi Kazutoshi
Uvsor Facility Institute For Molecular Science
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Takahashi K
Japan Atomic Energy Agency
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TANAKA Senku
School of Mathematical and Phsical Science, The Graduate University for Advanced Studies
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Tanaka Senku
School Of Mathematical And Phsical Science The Graduate University For Advanced Studies
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