Ultrafast Decay of Surface Photo-Voltage Effect on n-type GaAs(100) Surface(Condensed matter : electronic structure and electrical, magnetic, and optical properties)
スポンサーリンク
概要
- 論文の詳細を見る
Surface photo-voltage (SPV) effect on n-type GaAs(100) has been investigated with a newly developed time-resolved photoemission spectroscopy, in which the sample surface is excited by one-photon of the pump pulse and the photoemission is measured by two-photon excitation of the probe pulse. Ultrafast decay of the SPV was found in a several picosecond range at 300 and 100K, corresponding to the hot-electron lifetime in GaAs. The slow SPV decay was also observed in a few hundred picoseconds, due to the thermalized electrons.
- 社団法人日本物理学会の論文
- 2007-10-15
著者
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Kamada Masao
Synchrotron Light Application Center Saga University
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Kamada Masao
Synchrotornlight Application Center Saga University
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Takahashi Kazutoshi
Synchrotron Light Application Center Saga University
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Azuma Junpei
Synchrotron Light Application Center Saga University
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TOKUDOMI Shinji
Synchrotron Light Application Center, Saga University
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Tokudomi Shinji
Synchrotron Light Application Center Saga University
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