Ultrafast Time Dependence of Surface Photo-Voltage Effect on p-Type GaAs(100) Surface(Condensed matter: electronic structure and electrical, magnetic, and optical properties)

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概要

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• The ultrafast surface photo-voltage (SPV) effect on the p-type GaAs(100) surface has been investigated by using the time-resolved valence-band photoemission spectroscopy with the Ti : sapphire regenerative amplifier. The rise of the SPV effect has been observed on the p-type GaAs(100). The time scale of the SPV rise depends on the dopant levels, indicating the important role of the surface electric field due to the band bending. On the other hand, the rise of the SPV effect on n-type GaAs(100) is faster than the experimental time resolution of 430fs. It is considered that the SPV rise should be caused by the transport process of the photo-excited electrons and holes in the n- and p-type GaAs(100) surfaces, respectively.

• 社団法人日本物理学会の論文
• 2008-01-15

著者

• Kamada Masao

  Synchrotron Light Application Center Saga University

• Kamada Masao

  Synchrotornlight Application Center Saga University

• Takahashi Kazutoshi

  Synchrotron Light Application Center Saga University

• Azuma Junpei

  Synchrotron Light Application Center Saga University

• TOKUDOMI Shinji

  Synchrotron Light Application Center, Saga University

• Tokudomi Shinji

  Synchrotron Light Application Center Saga University

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