Maeda Shigenobu | Ulsi Development Center Mitsubishi Electric Corporation

スポンサーリンク

概要

関連著者

もっと見る

著作論文

A Sub 1-V L-Band Low Noise Amplifier SOI CMOS(Special Section on Analog Circuit Techniques and Related Topics)
A CAD-Compatible SOI-CMOS Gate Array Using 0.35 μm Partially-Depleted Transistors (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
Analyses of the Radiation-Caused Characteristics Change in SOI MOSFETs Using Field Shield Isolation
Impact of μA-ON-Current Gate-All-Around TFT (GAT) for Static RAM of 16Mb and beyond
Impact of μ A-ON-Current Gate All-Around TFT (GAT) for 16MSRAM and Beyond
SOI/CMOS Circuit Design for High-Speed Communication LSIs (Special Issue on New Concept Device and Novel Architecture LSIs)
A 0.4 μm Gate-All-Around TFT (GAT) Using a Dummy Nitride Pattern for High-Density Memories
Hot Carrier Evaluation of TFT by Emission Microscopy (Special Issue on Quarter Micron Si Device and Process Technologies)
Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices

スポンサーリンク