Impact of μA-ON-Current Gate-All-Around TFT (GAT) for Static RAM of 16Mb and beyond

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概要

• 論文の詳細を見る
• 1996-02-01

著者

• Hirao T

  Advanced Device Development Dept. Renesas Technology Corp.

• MAEGAWA Shigeto

  ULSI Laboratory, Mitsubishi Electric Corporation

• MAEDA Shigenobu

  ULSI Development Center, Mitsubishi Electric Corporation

• IPPOSHI Takashi

  ULSI Development Center, Mitsubishi Electric Corporation

• INOUE Yasuo

  ULSI Development Center, Mitsubishi Electric Corporation

• MIYOSHI Hirokazu

  ULSI Laboratory, Mitsubishi Electric Corporation

• HIRAO Tadashi

  ULSI Laboratory, Mitsubishi Electric Corporation

• KURIYAMA Hirotada

  ULSI Laboratory, Mitsubishi Electric Corporation

• KOHNO Yoshio

  ULSI Laboratory, Mitsubishi Electric Corporation

• Inoue Y

  National Defense Acad. Yokosuka Jpn

• Kohno Yoshio

  Ulsi Laboratory Mitsubishi Electric Corporation

• Maegawa Shigeto

  Advanced Device Development Dept. Renesas Technology Corp.

• Maegawa Shigeto

  Ulsi Development Center Mitsubishi Electric Corporation

• Maeda Shigenobu

  Ulsi Development Center Mitsubishi Electric Corporation

• Ipposhi Takashi

  Advanced Device Development Dept. Renesas Technology Corp.

• Miyoshi Hirokazu

  Ulsi Laboratory Mitsubishi Electric Corporation

• Kuriyama Hiroyuki

  Sanyo Electric Co. Ltd.:giant Electronics Technology Co. Ltd.

• Ipposhi T

  Advanced Device Development Dept. Renesas Technology Corp.

• Miyoshi Hirokazu

  徳島大学医学部

• Inoue Yasuo

  Ulsi Development Center Mitsubishi Electric Corporation

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