Impact of Nitrogen Implantation on Highly Reliable Sub-Quarter-Micron Metal Oxide Field-Effect Transistors (MOSFETs) with Lightly Doped Drain Structure

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概要

• 論文の詳細を見る
• 1996-02-01

著者

• INUISHI Masahide

  ULSI Laboratory, Mitsubishi Electric Corporation

• MIYOSHI Hirokazu

  ULSI Laboratory, Mitsubishi Electric Corporation

• KUROI Takashi

  ULSI Development Center, Mitsubishi Electric Corporation

• SHIMIZU Satoshi

  ULSI Laboratory, Mitsubishi Electric Corporation

• OKUMURA Yoshinori

  ULSI Laboratory, Mitsubishi Electric Corporation

• Kuroi T

  Ulsi Development Center Mitsubishi Electric Corporation

• Kusunoki Shigeru

  ULSI Laboratory, Mitsubishi Electric Corporation

関連論文

• Direct Measurement of Transient Drain Currents in Partially-Depleted SOI N-Channel MOSFETs Using a Nuclear Microprobe for Highly Reliable Device Designs
• Suppression of Parasitic MOSFETs at LOCOS Edge Region in Partially Depleted SOI MOSFETs
• Features of SOI DRAM's and their Potential for Low-Voltage and/or Giga-Bit Scale DRAM's (Special Issue on ULSI Memory Technology)
• Impact of μA-ON-Current Gate-All-Around TFT (GAT) for Static RAM of 16Mb and beyond
• Saturation Phenomenon of Stress-Induced Gate Leakage Current
• Control of Carrier Collection Efficiency in n^+p Diode with Retrograde Well and Epitaxial Layers
• Disk-Shaped Stacked Capacitor Cell for 256 Mb Dynamic Random-Access Memory
• Soft-Error Study of DRAMs with Retrograde Well Structure by New Evaluation Method (Special Issue on Quarter Micron Si Device and Process Technologies)
• High performance 0.2μm Dual Gate Complementary MOS Technologies by Suppression of Transient-Enhanced-Diffusion using Rapid Thermal Annealing
• Scalability of Gate/N^- Overlapped Lightly Doped Drain in Deep-Submicrometer Regime
• Subquarter-micrometer Dual Gate Complementary Metal Oxide Semiconductor Field Effect Transistor with Ultrathin Gate Oxide of 2 nm
• Clarification of Nitridation Effect on Oxide Formation Methods
• Proximity Gettering of Heavy Metals by High-Energy Ion Implantation
• New P-MOSFET Hot-Carrier Degradation Model for Bi-Directional Operation
• Memory Array Architecture and Decoding Scheme for 3 V Only Sector Erasable DINOR Flash Memory (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994))
• Leakage Mechanism of Local Junctions Forming the Main or Tail Mode of Retention Characteristics for Dynamic Random Access Memories
• Leakage Mechanism of Local Junctions Forming Main or Tail Mode of DRAM Retention Characteristics
• Bipolar Transistor with a Buried Layer Formed by High-Energy Ion Implantation for Subhalf-Micron Bipolar-Complementary Metal Oxide Semiconductor LSIs
• Novel Shallow Trench Isolation Process from Viewpoint of Total Strain Process Design for 45nm Node Devices and Beyond
• Advanced Retrograde Well Technology for 90-nm-Node Embedded Static Random Access Memory Using High-Energy Parallel Beam
• The Effects on Metal Oxide Semiconductor Field Effect Transistor Properties of Nitrogen Implantation into p^+ Polysilicon Gate
• Reliability of Source-to-Drain Non-Uniformly Doped Channel (NUDC)MOSFETs for Sub-Quarter-Micron Region
• Substrate Engineering for Reduction of Alpha-Particle-Induced Charge Collection Efficiency
• Impact of Nitrogen Implantation on Highly Reliable Sub-Quarter-Micron Metal Oxide Field-Effect Transistors (MOSFETs) with Lightly Doped Drain Structure
• The Impact of Nitrogen Implantation into Highty Doped Polysilicon Gates for flighty Reliable and High-Performance Sob-Quarter-Micron Dual-Gate Complementary Metal Oxide Semiconductor
• Stable Solution Method for Viscoelastic Oxidation Including Stress-Dependent Viscosity
• Clarification of Nitridation Effect on Oxide Formation Methods
• Impact of Nitrogen Implantation on Highly Reliable Sub-Quarter-Micron Metal Oxide Field-Effect Transistors (MOSFETs) with Lightly Doped Drain Structure

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