INUISHI Masahide | ULSI Laboratory, Mitsubishi Electric Corporation

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概要

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著作論文

Direct Measurement of Transient Drain Currents in Partially-Depleted SOI N-Channel MOSFETs Using a Nuclear Microprobe for Highly Reliable Device Designs
Control of Carrier Collection Efficiency in n^+p Diode with Retrograde Well and Epitaxial Layers
Scalability of Gate/N^- Overlapped Lightly Doped Drain in Deep-Submicrometer Regime
Subquarter-micrometer Dual Gate Complementary Metal Oxide Semiconductor Field Effect Transistor with Ultrathin Gate Oxide of 2 nm
Clarification of Nitridation Effect on Oxide Formation Methods
New P-MOSFET Hot-Carrier Degradation Model for Bi-Directional Operation
Leakage Mechanism of Local Junctions Forming the Main or Tail Mode of Retention Characteristics for Dynamic Random Access Memories
Leakage Mechanism of Local Junctions Forming Main or Tail Mode of DRAM Retention Characteristics
Bipolar Transistor with a Buried Layer Formed by High-Energy Ion Implantation for Subhalf-Micron Bipolar-Complementary Metal Oxide Semiconductor LSIs
Advanced Retrograde Well Technology for 90-nm-Node Embedded Static Random Access Memory Using High-Energy Parallel Beam
The Effects on Metal Oxide Semiconductor Field Effect Transistor Properties of Nitrogen Implantation into p^+ Polysilicon Gate
Reliability of Source-to-Drain Non-Uniformly Doped Channel (NUDC)MOSFETs for Sub-Quarter-Micron Region
Substrate Engineering for Reduction of Alpha-Particle-Induced Charge Collection Efficiency
Impact of Nitrogen Implantation on Highly Reliable Sub-Quarter-Micron Metal Oxide Field-Effect Transistors (MOSFETs) with Lightly Doped Drain Structure
The Impact of Nitrogen Implantation into Highty Doped Polysilicon Gates for flighty Reliable and High-Performance Sob-Quarter-Micron Dual-Gate Complementary Metal Oxide Semiconductor

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