Takai M | Research Center For Materials Science At Extreme Conditions And Graduate School Of Engineering Scien
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概要
- TAKAI Mikioの詳細を見る
- 同名の論文著者
- Research Center For Materials Science At Extreme Conditions And Graduate School Of Engineering Scienの論文著者
関連著者
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Takai M
Research Center For Materials Science At Extreme Conditions And Graduate School Of Engineering Scien
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Takai Mikio
Faculty Of Engineering Science And Reseatch Center For Extreme Materials
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Takai Mikio
Research Center For Environmental Genomics Kobe University
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TAKAI Mikio
Research Center for Materials Science at Extreme Conditions, Osaka University
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Kishimoto T
Department Of Physics Osaka University
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Kishimoto T
Department Of Electrical Engineering Waseda University
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Park Y‐k
Samsung Electronics Gyeonggi‐do Kor
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Ogawa Izumi
Department Of Physics Osaka University
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Arita Y
Research Center For Materials Science At Extreme Conditions And Graduate School Of Engineering Scien
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NISHIMURA Tadashi
ULSI Laboratory, Mitsubishi Electric Corporation
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Okuda S
Mitsubishi Electric Corp. Hyogo Jpn
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Ohno Y
Nagoya Univ. Naogya Jpn
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KISHIMOTO Takehisa
Research Center for Materials Science at Extreme Conditions and Faculty of Engineering Science, Osak
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FREY Lothar
Fraunhofer Institut fuer Integrierte Schaltungen
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RYSSEL Heiner
Fraunhofer Institut fuer Integrierte Schaltungen
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Nishimura Tadashi
The Ulsi Development Center Mitsubishi Electric Corporation
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Nishimura Tadashi
Ulsi Research And Development Center Mitsubishi Electric Corporation
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Ryssel Heiner
The Fraunhofer Institut Fur Integrierte Schaltungen Bauelementetechologie
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Hosono A
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Hosono Akihiko
Faculty Of Engineering Yokohama National University:(present Address) Isuzu Motor Co. Ltd.
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Hosono Akihiko
Advanced Technology R&d Center Mitsubishi Electric Corp.
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Okuda Soichiro
Advanced Technology R&d Center Mitsubishi Electric Corp.
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Nishimura Tadashi
Ulsi Development Center Mitsubishi Electric Corporation
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INUISHI Masahide
ULSI Laboratory, Mitsubishi Electric Corporation
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Zhao Wei-jiang
Research Center For Materials Science At Extreme Conditions And Graduate School Of Engineering Scien
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Horino Y
Advanced Device Development Dept. Renesas Technology Corp.
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Suzuki N
Riken (inst. Physical And Chemical Res.) Saitama
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KISHIMOTO Tadafumi
Department of Physics,Osaka university
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Sawada A
Research Center For Materials Science At Extreme Conditions And Graduate School Of Engineering Scien
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Sawada Akihiro
The Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Ohno Yoshikazu
Ulsi Laboratory Mitsubishi Electric Corporation
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Hosono Akihiko
Advanced Technology R&d Center Mitsubishi Electric Corporation
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JARUPOONPHOL Werapong
大阪大学大学院 基礎工学研究科
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KINOMURA Atsushi
National Institute of Advanced Industrial Science and Technology
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LEHRER Christoph
Fraunhofer Institut fuer Integrierte Schaltungen
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PARK Yang-Keun
Research Center for Materials Science at Extreme Conditions and Graduate School of Engineering Scien
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Horiba Yasutaka
System Lsi Laboratory Mitsubishi Electric Corporation
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Nagai Tomonori
Department Of Electronics And Information Science Teikyo University Of Science And Technology
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Nagai T
Department Earth And Space Science Graduate School Of Science Osaka University
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OKUDA Soichiro
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Morimoto H
Semiconductor Leading Edge Technologies Inc.
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ARITA Yutaka
Research Center for Materials Science at Extreme Conditions and Graduate School of Engineering Scien
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Inuishi Masahide
Advanced Device Development Dept. Renesas Technology Corp.
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Inuishi Masahide
Ulsi Development Center Mitsubishi Electric Corporation
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Kinomura A
National Institute Of Advanced Industrial Science And Technology
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Kishimoto Tadafumi
Department Of Physics Osaka University
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Ochiai Chikako
Research Center For Materials Science At Extreme Conditions And Graduate School Of Engineering Scien
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Jarupoonphol Werapong
Research Center For Materials Science At Extreme Conditions And Graduate School Of Engineering Scien
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YAMAGUCHI Yasuo
Institute for Materials Research, Tohoku University
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Horino Y
Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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Hirao T
Advanced Device Development Dept. Renesas Technology Corp.
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Yamaguchi Y
Tohoku Univ. Sendai
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Yamaguchi Y
Kumamoto Techno Res. Park Kumamoto Jpn
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IWAMATSU Toshiaki
ULSI Laboratory, Mitsubishi Electric Corporation
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NAKAYAMA Kouichi
Research Center for Materials Science at Extreme Conditions, Osaka University
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TAKAOKA Hiromichi
Research Center for Materials Science at Extreme Conditions, Osaka University
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YAMAGUCHI Yasuo
ULSI Laboratory, Mitsubishi Electric Corporation
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MAEGAWA Shigeto
ULSI Laboratory, Mitsubishi Electric Corporation
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KINOMURA Atsushi
ONRI, AIST
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HORINO Yuji
ONRI, AIST
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IWAMATSU Toshiaki
Advanced Device Development Dept., Renesas Technology Corp.
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INUISHI Masahide
Advanced Device Development Dept., Renesas Technology Corp.
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Maegawa Shigeto
Advanced Device Development Dept. Renesas Technology Corp.
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TAKAI Mikio
Faculty of Engineering Science, and Research Center for Extreme Materials, Osaka University
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HORIBA Yasutaka
The authors are with Kita-Itami Works, Mitsubishi Electric Corporation
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Sawada Akihiro
Research Center For Materials Science At Extreme Conditions Osaka University
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KISHIMOTO Takehisa
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University
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PARK Yang-Keun
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University
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SONODA Kenichirou
ULSI Laboratory, Mitsubishi Electric Corporation
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SAYAMA Hirokazu
ULSI Laboratory, Mitsubishi Electric Corporation
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KINOMURA Atsushi
Osaka National Research Institute, AIST
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HORINO Yuji
Osaka National Research Institute, AIST
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FUJII Kanenaga
Osaka National Research Institute, AIST
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Yamaguchi Y
Central Workshop Osaka University
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HORINO Yuji
National Institute of Advanced Industrial Science and Technology
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Nakayama Kazuhiko
Mechanical Processing Technology Research Laboratories Kao Corporation
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PARK Yang-Neun
Research Center for Materials Science at Extreme Conditions, Osaka University
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NAGAI Takaaki
Research Center for Materials Science at Extreme Conditions and Graduate School of Engineering Scien
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Maegawa Shigeto
Ulsi Development Center Mitsubishi Electric Corporation
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Horiba Yasutaka
Lsi Laboratory Mitsubishi Electric Corporation
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Horiba Yasutaka
The Authors Are With Kita-itami Works Mitsubishi Electric Corporation
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Iwamatsu Toshiaki
Advanced Device Development Dept. Renesas Technology Corp.
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Kobayashi Michihiro
Research Center For Materials Science At Extreme Conditions And Graduate School Of Engineering Scien
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Sawada Akihiro
Research Center For Materials Science At Extreme Conditions And Graduate School Of Engineering Scien
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YAVAS Oguz
Research Center for Materials Science at Extreme Conditions and Graduate School of Engineering Scien
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HASHIMOTO Takeshi
Research Center for Materials Science at Extreme Conditions and Graduate School of Engineering Scien
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SUZUKI Naoki
Research Center for Materials Science at Extreme Conditions and Graduate School of Engineering Scien
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HIGUCHI Yohei
Research Center for Materials Science at Extreme Conditions and Graduate School of Engineering Scien
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Higuchi Yohei
Research Center For Materials Science At Extreme Conditions And Graduate School Of Engineering Scien
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Nakayama K
National Inst. Advanced Industrial Technol. And Sci. Ibaraki Jpn
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Sayama H
Mitsubishi Electric Corp. Hyogo Jpn
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Sayama Hirokazu
Ulsi Development Center Mitsubishi Electric Corporation
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Horino Yuji
National Inst. Of Advanced Industrial Sci. And Technol. Kansai Osaka Jpn
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Lipp Stephan
Fraunhofer Institute For Integrated Circuit And Chair For Electronic Devices University Of Erlangen-
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MORIMOTO Hiroji
Research Center for Materials Science at Extreme Conditions, and Faculty of Engineering Science, Osa
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YURA Shinsuke
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Takai Mikio
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
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Yura Shinsuke
Advanced Technology R&d Center Mitsubishi Electric Corp.
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JARUPOONPHOL Werapong
Research Center for Materials Science at Extreme Conditions and Graduate School of Engineering Scien
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OCHIAI Chikako
Research Center for Materials Science at Extreme Conditions and Graduate School of Engineering Scien
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Sonoda K
Ulsi Development Center Mitsubishi Electric Corporation
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Hashimoto Takeshi
Research Center For Materials Science At Extreme Conditions And Graduate School Of Engineering Science Osaka University
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Hashimoto Takeshi
Research Center For Integrated Systems Hiroshima University
著作論文
- Direct Measurement of Transient Drain Currents in Partially-Depleted SOI N-Channel MOSFETs Using a Nuclear Microprobe for Highly Reliable Device Designs
- Control of Carrier Collection Efficiency in n+p Diode with Retrograde Well and Epitaxial Layers
- Control of Carrier Collection Efficiency in n^+p Diode with Retrograde Well and Epitaxial Layers
- Well Structure by High-Energy Boron Implantation for Soft-Error Reduction in Dynamic Random Access Memories (DRAMs)
- Microprobe Analysis of Pt Films Deposited by Beam Induced Reaction
- Microprobe Analysis of Pt Films Deposited by Beam Induced Reaction
- Microanalysis of Impurity Contamination in Masklessly Etched Area Using Focused Ion Beam
- Microanalysis of Impurity Contamination in Masklessly Etched Area Using Focused Ion Beam
- Well Structure by High Energy Boron Implantation for Soft Error Reduction in DRAMs
- Wavelength Dependence of Laser Cleaning for Field Emitter Arrays
- Pulsed Laser Deposition of Diamond-Like Carbon Films on Gated Si Field Emitter Arrays for Improved Electron Emission
- Single Event Upset in Static Random Access Memories in Atmospheric Neutron Environments
- Experimental Investigation of Thermal Neutron-Induced Single Event Upset in Static Random Access Memories : Semiconductors
- Electron-Beam-Induced Deposition of Pt for Field Emitter Arrays
- Electron Beam Induced Deposition of Pt for Field Emitter Arrays
- Field Emission Characteristics of Screen-Printed Carbon Nanotube After Laser Irradiatio
- Field Emission Characteristics of Screen-Printed Carbon Nanotube After Laser Irradiation
- Single Event Upset in Static Random Access Memories in Atmospheric Neutron Environments
- Prototyping of Field Emitter Array Using Focused Ion and Electron Beams
- Prototyping of Field emitter Array Using Focused Ion and Electron Beams
- Experiment Investigation of Thermal Neutron-Induced Single Event Upset in Static Random Access Memories
- Surface Structure of Sulfur-Terminated GaAs by Medium Energy Ion Scattering