TAKAI Mikio | Faculty of Engineering Science, and Research Center for Extreme Materials, Osaka University

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著作論文

Atomic Sites of S on (NH_4)_2S_x-Treated GaAs(100) Surface
Well Structure by High-Energy Boron Implantation for Soft-Error Reduction in Dynamic Random Access Memories (DRAMs)
Estimation of Carrier Suppression by High-Energy Boron-Implanted Layer for Soft Error Reduction
Soft-Error Study of DRAMs with Retrograde Well Structure by New Evaluation Method (Special Issue on Quarter Micron Si Device and Process Technologies)
Charge Collection Control Using Retrograde Well Tested by Proton Microprobe Irradiation
New Method for Soft-Error Mapping in Dynamic Random Access Memory Using Nuclear Microprobe
Magnetic Analysis of Quadrupole Lens for MeV Ion Microprobe
Three-Dimensional Analysis of Locally Implanted Atoms by MeV Helium Ion Microprobe
Etching Rate Control by MeV O^+ Implantation for Laser-Chemical Reaction of Ferrite : Beam-Induced Physics and Chemistry
Microbeam Line of MeV Heavy Ions for Materials Modification and In-Situ Analysis : Beam-Induced Physics and Chemistry
Local Control of Magnetic Property in Stainless Steel Surface by Ion and Laser Beams : Beam-Induced Physics and Chemistry
Microbeam Line of MeV Heavy Ions for Materials Modification and In-Situ Analysis
Local Control of Magnetic Property in Stainless Steel Surface by Ion and Laser Beams
Etching Rate Control by MeV O^+ Implantation for Laser-Chemical Reaction of Ferrite
Laser-Induced Etching of Mn-Zn ferrite and Its Application : Etching and Deposition Technology
Influence of Beam Current Ripple on Secondary Electron and RBS Mapping Images
Damage during Microchanneling Analysis Using 400 keV Helium Ion Microprobe
Residual Local Strain in Gallium Arsenide Induced by Laser Pyrolytic Etchingin CCl_4 Atmosphere
Local Temperature Rise during Laser Induced Etching of Gallium Arsenide in SiCl_4 Atmosphere
Maskless Dry Etching of Gallium Arsenide with a Submicron Line-Width by Laser Pyrolysis in CCl_4 Gas Atmosphere
Laser Induced Local Etching of Gallium Arsenide in Gas Atmosphere
Increase in T_c of Nb Films Implanted with N^+_2
Control of T_c for Niobium by N Ion Implantation
Residual Strain in Single Crystalline Germanium Islands on Insulator
Thickness Dependence of SiO_2 Capping Layers on Recrystallization of Germanium Islands on Insulator
Gallium Arsenide Layers Grown by Molecular Beam Epitaxy on Single Crystalline Germanium Islands on Insulator
Single Crystalline Germanium Island on Insulator by Zone Melting Recrystallization

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