NAMBA Susumu | Research Center for Extreme Materials and Department of Electrical Engineering, Osaka University
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概要
- Namba Susumuの詳細を見る
- 同名の論文著者
- Research Center for Extreme Materials and Department of Electrical Engineering, Osaka Universityの論文著者
関連著者
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Namba S
Riken The Institute Of Physical And Chemical Research
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NAMBA Susumu
Research Center for Extreme Materials and Department of Electrical Engineering, Osaka University
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Namba Susumu
Research Center For Extreme Materials And Department Of Electrical Engineering Osaka University
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Namba S
Faculty Of Engineering Osaka University
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Namba S
Faculty Of Engineering Science Osaka University
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Gamo Kenji
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Gamo Kenji
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
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Namba Susumu
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Namba S
Japan Atomic Energy Res. Inst. Kyoto Jpn
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Masuda Kohzoh
Material Science Tsukuba University
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GAMO Kenji
Faculty of Engineering Science, Osaka University
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Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
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Namba Susumu
Faculty Of Engineering Science Osaka University
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Masuda Kohzoh
Department Of Electric Engineering Faculty Of Engineering Science Osaka University
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Nonoyama Shinji
Quantum Material Research Laboratory Frontier Research Program The Institute Of Physical And Chemica
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Namba Susumu
Frontier Research Program Riken
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Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
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Kosugi Toshihiko
Department Of Electric Engineering Faculty Of Engineering Science Osaka University
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KOSUGI Toshihiko
NTT Wireless System Laboratories
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Namba S
Inst. Physical And Chemical Research Wako
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NAMBA Susumu
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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GAMO Kenji
Department of Electrical Engineering,Faculty of Engineering Sciences,Osaka University
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AIHARA Ryuzo
Eiko Engineering Co.Ltd.
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Nagatomo S
Shizuoka Univ. Shizuoka Jpn
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Aoyagi Y
Inst. Physics And Chemical Res. (riken) Wako Jpn
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Namba S
Osaka Univ. Osaka
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KOSUGI Toshihiko
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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Murakami Kouichi
Faculty Of Engineering Science Osaka University
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NAKASHIMA Shin-ichi
Faculty of Engineering, Osaka University
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HARA Tamio
Toyota Technological Institute
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MASUDA Kohzoh
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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Aoyagi Y
Semiconductor Laboratory Riken The Institute For Physical And Chemical Research
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Namba Susumu
Nagasaki Institute Of Applied Science
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TAKAI Mikio
Faculty of Engineering Science, and Research Center for Extreme Materials, Osaka University
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Aoyagi Yoshinobu
Riken
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GAMO Kenji
Research Center for Extereme Materials, Osaka University
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NAMBA Susumu
Research Center for Extereme Materials, Osaka University
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HAMAGAKI Manabu
RIKEN, The Institute of Physical and Chemical Research
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HARA Tamio
RIKEN, The Institute of Physical and Chemical Research
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Aoyagi Y
The Institute Of Physical And Chemical Research
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ILIC Gradimir
Chalk River Nuclear Laboratories, Atomic Energy of Canada Limited
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Ochiai Yukinori
Faculty Of Engineering Science Osaka University
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YAMASHIRO Tomoki
Department of Electric Engineering, Faculty of Engineering Science, Osaka University
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MIMURA Ryou
JEOL Ltd
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AIHARA Ryuzo
JEOL Ltd
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Yamamoto Tokujirou
Department Of Materials Science And Engineering Kyoto University
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Mimura R
Jeol Ltd
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Hamagaki M
The Institute Of Physical And Chemical Research (riken)
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Hamagaki Manabu
Akashi Technical Institute Kawasaki Heavy Industries
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Ilic Gradimir
Chalk River Nuclear Laboratories Atomic Energy Of Canada Limited
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Takai Mikio
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
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Hamagaki Manabu
Riken
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Murakami Kouichi
Faculty Of Engineering Ehime University
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Yamamoto Takayoshi
The Institute Of Scientific And Industrial Research Osaka University
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OKAMOTO Hiroaki
Faculty of Engineering Science, Osaka University
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Aoyagi Y
Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology
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Davies John
Chalk River Nuclear Laboratories Atomic Energy Of Canada Limited
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Hara T
Toyota Technological Inst. Nagoya Jpn
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Nakai Hideo
Department Of Industrial Chemistry Tokyo University Of Agriculture And Technology
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Masui Norio
Faculty Of Engineering Science Osaka University
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Iwaki Masaya
Institute Of Chemical And Physical Research
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Namba Susumu
Riken The Institute Of Physical And Chemical Research
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Namba Susumu
Institute Of Physical And Chemical Research
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Kawabe M
Univ. Tsukuba Ibaraki Jpn
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Kawabe M
Nikko Materials Co. Ltd. Saitama Jpn
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Kawabe Mitsuo
Institute Of Applied Physics University Of Tsukuba
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Kawabe Mitsuo
Faculty Of Engineering Science Osaka University
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Masuda Kohzoh
Faculty Of Engineering Science Osaka University
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Nakai Hiroyuki
Faculty Of Engineering Science Osaka University
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AOYAGI Yoshinobu
Institute of Physical and Chemical Research (RIKEN)
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TAKAI Mikio
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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YUBA Yoshihiko
Faculty of Engineering Science, Osaka University
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Gamo K
Osaka Univ. Osaka
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Yuba Yoshihiko
Department Of Physical Science Graduate School Of Engineering Science Osaka University
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Yuba Yoshihiko
Faculty Of Engineering Science Osaka University
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Aoyagi Yoshinobu
Nanoelectronic Materials Laboratory Frontier Research Program Riken
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Okamoto Hiroaki
Faculty Of Engineering Science Osaka University
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IWAKI Masaya
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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ISHIHARA Shinji
Research Reactor Institute, Kyoto University
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KIMURA Itsuro
Research Reactor Institute, Kyoto University
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MITCHELL Ian
Chalk River Nuclear Laboratories, Atomic Energy of Canada Limited
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WHITTON James
Chalk River Nuclear Laboratories, Atomic Energy of Canada Limited
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MURAKAMI KOUICHI
Department of Urology, Faculty of Medicine, Toyama Medical and Pharmaceutical University
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KOSUGI Toshihiro
Department of Electric Engineering, Faculty of Engineering Science, Osaka University
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AIHARA Ryuzo
Eico Engineering Co. Lid.
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Xu Zheng
Faculty of Engineering Science, Osaka University
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KOSUGI Toshihiko
Faculty of Engineering Science, Osaka University
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Jin-Zhong YU
Institute of Semicinductors, Chinese Academy of Sciences
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NAMBU Susumu
Faculty of Engineering Science, Osaka university
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Miyauchi Michihiro
Faculty Of Engineering Osaka University
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Aoyagi Yoshinobu
Institute Of Physical And Chemical Research
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Yoshizawa T
Graduate School Of Science And Engineering University Of Toyama
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Kimura Itsuro
Research Reactor Institute Kyoto University
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Xu Z
Saga Univ. Saga
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Jin-zhong Yu
Institute Of Semicinductors Chinese Academy Of Sciences
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Mitchell Ian
Chalk River Nuclear Laboratories Atomic Energy Of Canada Limited
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Whitton James
Chalk River Nuclear Laboratories Atomic Energy Of Canada Limited
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Yuba Yoshihiko
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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SANDA Atsuo
Faculty of Engineering, Saitama University
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Ishihara Shinji
Research Reactor Institute Kyoto University
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TANIGAWA Takaho
ULSI Device Development Laboratories NEC Corporation
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Tanigawa Takaho
Faculty Of Engineering Science Osaka University
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Minamisono Tadanori
Faculty of Science, Osaka University
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USHIKU Kenji
Faculty of Engineering Science, Osaka University
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KAWABE Mitsuo
The Institute of Material Science, University of Tsukuba
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Ushiku Kenji
Faculty Of Engineering Science Osaka University
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KOH Youn-Kyu
Faculty of Engineering Science, Osaka University
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HAMAKAWA Yohihiro
Faculty of Engineering Science, Osaka University
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Koh Youn-kyu
Faculty Of Engineering Science Osaka University:department Of Physics Yonsei University
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Sanda Atsuo
Faculty Of Engineering Saitama University
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Ishihara Shinji
Research Teactor Institute Kyoto University
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Xu Zheng
Institute Of Optoelectronic Technology Northern Jiaotong University
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ILIC Gradimir
Department of Physics, Queen's University Kingston
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Hamakawa Yohihiro
Faculty Of Engineering Science Osaka University
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Murakami Kouichi
Department Of Obstetrics And Gynecology Faculty Of Medicine Kanazawa University
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Yamashiro Tomoki
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Lin Miin-shyong
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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NAKAI Hiroyuki
Faculty of Agriculture, Niigata University
著作論文
- Enhanced Diffusion and Lattice Location of Indium and Gallium Implanted in Silicon
- The Characteristics of Ion-Beam-Induced Spontaneous Etching of GaAs by Low-Energy Focused Ion Beam Irradiation : Focused Ion Beam Process
- The Characteristics of Ion-Beam-Induced Spontaneous Etching of GaAs by Low-Energy Focused Ion Beam Irradiation
- Low Energy Focused Ion Beam System and Application to Low Damage Microprocess : Etching and Deposition Technology
- Low Energy Focused Ion Beam System and Application to Low Damage Microprocess
- Ion Beam Assisted Deposition of Tungsten on GaAs
- Induced Defects in GaAs Etched by Low Energy Ions in Electron Beam excited Plasma(EBEP) System : Etching and Deposition Technology
- Ion Beam Assisted Maskless Etching of GaAs by 50 keV Focused Ion Beam
- New High Current Low Energy Ion Source
- Residual Local Strain in Gallium Arsenide Induced by Laser Pyrolytic Etchingin CCl_4 Atmosphere
- Hall Effect Measurements of Zn Implanted GaAs
- Effects of Implantation Temperature on Lattice Location of Tellurium Implanted in Gallium Arsenide
- ESR Studies on Defects and Amorphous Phase in Silicon Produced by Ion Implantation
- Dose Dependence of Photoluminescence Degradation in Te Ion-Implanted GaAs
- Lattice Location of Sb Implanted in GaAs Single Crystals
- Stimulated Emission from CdS Thin Films Excited by N_2 Laser
- Dynamic Behavior of 30-ps Pulsed-Laser Annealing in Ion-Implanted Si
- Residual Strain in Single Crystalline Germanium Islands on Insulator
- Electrical Properties of Laser-Annealed Glow-Discharge Amorphous Silicon Layers
- Characteristics of Ion Beam Assisted Etching of GaAs Using Focused Ion Beam: Dependence on Gas Pressure