Tanigawa Takaho | Faculty Of Engineering Science Osaka University

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概要

• 同名の論文著者
• Faculty Of Engineering Science Osaka Universityの論文著者

関連著者

• TANIGAWA Takaho

  ULSI Device Development Laboratories NEC Corporation

• Tanigawa Takaho

  Faculty Of Engineering Science Osaka University

• Namba Susumu

  Faculty Of Engineering Science Osaka University

• GAMO Kenji

  Faculty of Engineering Science, Osaka University

• TAKAI Mikio

  Faculty of Engineering Science, and Research Center for Extreme Materials, Osaka University

• Gamo Kenji

  Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University

• Takai Mikio

  Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University

• Namba S

  Riken The Institute Of Physical And Chemical Research

• Namba Susumu

  Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University

• Namba S

  Faculty Of Engineering Osaka University

• Nonoyama Shinji

  Quantum Material Research Laboratory Frontier Research Program The Institute Of Physical And Chemica

• NAKASHIMA Shin-ichi

  Faculty of Engineering, Osaka University

• Koga H

  Kyushu Inst. Technol. Iizuka‐shi Jpn

• Namba Susumu

  Research Center For Extreme Materials And Department Of Electrical Engineering Osaka University

• Namba Susumu

  Frontier Research Program Riken

• Miyauchi Michihiro

  Faculty Of Engineering Osaka University

• Nagatomo S

  Shizuoka Univ. Shizuoka Jpn

• Minamisono Tadanori

  Faculty of Science, Osaka University

• YOSHINO Akira

  ULSI Device Development Laboratories, NEC Corporation

• KOGA Hiroki

  ULSI Device Development Laboratories, NEC Corporation

• OHYA Shuichi

  ULSI Device Development Laboratories, NEC Corporation

• Ohya Shuichi

  Ulsi Device Development Laboratories Nec Corporation

• Koga Hiroki

  Ulsi Device Development Division:(present Address)sony Corporation

• Yoshino Akira

  Ulsi Device Development Laboratories Nec Corporation

• NAMBA Susumu

  Research Center for Extreme Materials and Department of Electrical Engineering, Osaka University

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著作論文

• Improvement of Refresh Characteristics by SIMOX Technology for Giga-bit DRAMs (Special Issue on ULSI Memory Technology)
• Residual Strain in Single Crystalline Germanium Islands on Insulator
• Thickness Dependence of SiO_2 Capping Layers on Recrystallization of Germanium Islands on Insulator
• Gallium Arsenide Layers Grown by Molecular Beam Epitaxy on Single Crystalline Germanium Islands on Insulator
• Single Crystalline Germanium Island on Insulator by Zone Melting Recrystallization

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