Residual Strain in Single Crystalline Germanium Islands on Insulator
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概要
- 論文の詳細を見る
Residual strain in single crystalline germanium islands, recrystallized by zone melting, on SiO_2 substrates has been investigated by Raman microprobe measurements with a spatial resolution of 5 μm. It was found that strain of 3.0×10^<-3>-6.0×10^<-3>, corresponding to local tensile stress of 2.3 to 4.6 kbar, remained in single crystalline germanium islands after zone melting recrystallization.
- 社団法人応用物理学会の論文
- 1984-06-20
著者
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NAKASHIMA Shin-ichi
Faculty of Engineering, Osaka University
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Namba Susumu
Faculty Of Engineering Science Osaka University
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GAMO Kenji
Faculty of Engineering Science, Osaka University
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TAKAI Mikio
Faculty of Engineering Science, and Research Center for Extreme Materials, Osaka University
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Gamo Kenji
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
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Nonoyama Shinji
Quantum Material Research Laboratory Frontier Research Program The Institute Of Physical And Chemica
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Namba Susumu
Research Center For Extreme Materials And Department Of Electrical Engineering Osaka University
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Namba Susumu
Frontier Research Program Riken
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Miyauchi Michihiro
Faculty Of Engineering Osaka University
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TANIGAWA Takaho
ULSI Device Development Laboratories NEC Corporation
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Tanigawa Takaho
Faculty Of Engineering Science Osaka University
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Nagatomo S
Shizuoka Univ. Shizuoka Jpn
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Takai Mikio
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
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Namba S
Riken The Institute Of Physical And Chemical Research
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Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
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Namba S
Faculty Of Engineering Osaka University
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NAMBA Susumu
Research Center for Extreme Materials and Department of Electrical Engineering, Osaka University
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