Characteristics of Be–Si–Au Ternary Alloy Liquid Metal Ion Sources
スポンサーリンク
概要
- 論文の詳細を見る
Be–Si–Au ternary alloy liquid metal ion sources have been fabricated and basic characteristics such as mass spectra, energy distribution and angular current intensity have been measured. It was observed that for Be and Si, doubly charged ions are dominant over singly charged ions and the angular current intensity for the doubly charged ions is about 20 and 11 $\mu$A/str for Be and Si, respectively, at an energy spread (FWHM) of 10 eV. The present ion source could be operated for about 100 hours and is important for maskless implantation of both p- and n-type dopants in GaAs.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1984-01-20
著者
-
Gamo Kenji
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
-
Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
-
MATSUI Takao
Faculty of Engineering, Chiba University
-
Namba Susumu
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560
-
Matsui Takao
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560
関連論文
- Highly Uniform GaAs/AIAs Quantum Wires Grown on [001] Ridges of GaAs(100) Patterned Substrates by Molecular Beam Epitaxy
- Thin-Film Slot Antennas for 2.5 THz Submillimeter Radiation
- Fabrication of Antenna-Coupled Microbolometers
- Effects of Heat Treatment on the Sensitivity of Warm Carrier Devices for CH_3OH Laser Radiation
- Thin-Film Long-Wire Antenna for 10.6 μm CO_2 Laser Radiation
- Ion Beam Etching of InP. II. Reactive Etching with Halogen-Based Source Gases
- Ion Beam Etching of InP. I. Ar Ion Beam Etching and Fabrication of Grating for Integrated Optics
- Low-Energy Ion-Beam Irradiation Effects on Two-Dimensional Electron Gas in Modulation-Doped AlGaAs/ GaAs Heterostructure : Micro/nanofabrication and Devices
- Low-Energy Ion-Beam Irradiation Effects on Two-Dimensional Electron Gas in Modulation-Doped AlGaAs/GaAs Heterostructure
- Magnetic Analysis of Quadrupole Lens for MeV Ion Microprobe
- Three-Dimensional Analysis of Locally Implanted Atoms by MeV Helium Ion Microprobe
- Etching Rate Control by MeV O^+ Implantation for Laser-Chemical Reaction of Ferrite : Beam-Induced Physics and Chemistry
- Local Control of Magnetic Property in Stainless Steel Surface by Ion and Laser Beams : Beam-Induced Physics and Chemistry
- Local Control of Magnetic Property in Stainless Steel Surface by Ion and Laser Beams
- Etching Rate Control by MeV O^+ Implantation for Laser-Chemical Reaction of Ferrite
- Laser-Induced Etching of Mn-Zn ferrite and Its Application : Etching and Deposition Technology
- Ion Beam Assisted Deposition of Tungsten on GaAs
- Induced Defects in GaAs Etched by Low Energy Ions in Electron Beam excited Plasma(EBEP) System : Etching and Deposition Technology
- Ion Beam Assisted Maskless Etching of GaAs by 50 keV Focused Ion Beam
- Maskless Etching of AN Using Focused Ion Beam
- Maskless Ion Beam Assisted Etching of Si Using Chlorine Gas
- Digital Etching Using KrF Excimer Laser: Approach to Atomic-Order-Controlled Etching by Photo Induced Reaction
- Exciton Absorption in GaSe under Intense Excitation
- Luminescence due to Exciton-Electron and Exciton-Exciton Collisions in GaSe
- Influence of Beam Current Ripple on Secondary Electron and RBS Mapping Images
- Nanometer Pattern Delineation by Electron and Ion Beam Lithography
- B, As and Si Field Ion Sources
- Field Ion Sources Using Eutectic Alloys
- Fabrication of Niobium Weak Links by Means of Electron Beam Lithography and Ion Implantation : C-1: JOSEPHSON DEVICES
- Fabrication and DC Characteristics of Nb Vertical Type Microbridges
- An Assessment of e-Beam Controlled Discharge Pumping in KrF and XeCl Lasers
- Fabrication of Submicron Contact Hole with a Focused Ion Beam
- Self-Developing Characteristics of Nitrocellulose Exposed to Ion Beams
- CO_2 Laser Detection Using a Warm Carrier Device with a Thin Film Antenna
- Self-Development Mechanism of Nitrocellulose Resist : Electron Beam Irradiation
- Damage during Microchanneling Analysis Using 400 keV Helium Ion Microprobe
- Residual Local Strain in Gallium Arsenide Induced by Laser Pyrolytic Etchingin CCl_4 Atmosphere
- Local Temperature Rise during Laser Induced Etching of Gallium Arsenide in SiCl_4 Atmosphere
- Maskless Dry Etching of Gallium Arsenide with a Submicron Line-Width by Laser Pyrolysis in CCl_4 Gas Atmosphere
- Laser Induced Local Etching of Gallium Arsenide in Gas Atmosphere
- Effect of Heat Treatment on Electrical Conduction in DPPH Single Crystals Grown from Benzene Solution
- Effect of Heat Treatment on Crystal Structure of DPPH Single Crystals Grown from Benzene Solution
- Hyperfine Interaction in Mixed Crystal of DPPH and DPPH_2 Studied by ESR
- Optical Waveguiding and Electrooptic Modulation in Ion-Implanted CdTe
- Optical Waveguides Fabricated by B Ion Implanted into Fused Quartz
- A Large Time Delay of the Stimulated Emission in CdS Laser Pumped by an Electron Beam
- Increase in T_c of Nb Films Implanted with N^+_2
- Ion-Implanted Arsenic Profiles in GaAs Encapsulated by SiO_2 and Si_3N_4
- Control of T_c for Niobium by N Ion Implantation
- Comparison between Concentration Profiles of Arsenic Implanted in Silicon Measured by Means of Neutron Activation Analysis and Radioactive Ion Implantation
- Paramagnetic Defects Induced in Naphthalene and Anthracene Single Crystals by Neutron Irradiation at Low Temperature
- Stimulated Emission from CdS Thin Films Excited by N_2 Laser
- Electroluminescence of Green Light Region in Doped Anthracene
- Dynamic Behavior of 30-ps Pulsed-Laser Annealing in Ion-Implanted Si
- Residual Strain in Single Crystalline Germanium Islands on Insulator
- Thickness Dependence of SiO_2 Capping Layers on Recrystallization of Germanium Islands on Insulator
- Gallium Arsenide Layers Grown by Molecular Beam Epitaxy on Single Crystalline Germanium Islands on Insulator
- Single Crystalline Germanium Island on Insulator by Zone Melting Recrystallization
- Electrical Properties of Laser-Annealed Glow-Discharge Amorphous Silicon Layers
- Quantum Transport in PtSi Thin Films and Narrow Wires
- Self-Development Properties of Nitrocellulose for Focused Ion Beam Lithography : Techniques, Instrumentations and Measurement
- Contrast of the X-Ray Mask for Synchrotron Radiation and the Characteristics of Replicated Pattern
- A Blazed Si Grating for Soft X-Ray Fabricated by Two-Stage Reactive Ion-Beam Etching
- Graphoepitaxy of Ge Films on SiO_2 by Zone Melting Recrystallization
- Fabrication of 80 nm-Wide Lines in FPM Resist by H^+ Beam Exposure
- Fabrication of Si0_2 Grating Patterns with Vertical Sidewalls by S0R X-Ray Lithography and Reactive Ion-Beam Etching
- Etched Profile of Si by Ion-Bombardment-Enhanced Etching
- Reactive Ion-Beam Etching of Silicon Carbide
- Microfabrication of LiNbO_3 by Reactive Ion-Beam Etching
- Fabrication of SiO_2 Blazed Holographic Gratings by Reactive Ion-Etching
- Fabrication of a Grating Pattern with Submicrometer Dimension in Silicon Crystal by Ion-Bombardment-Enhanced Etching
- Stoichiometric Change in Gallium Arsenide after Laser-Induced Thermochemical Etching
- A Study on the Characteristics of Low-Energy Ion-Beam-Assisted Deposition of Tungsten
- Microanalysis by Focused MeV Helium Ion Beam
- 8 nm Wide Line Fabrication in PMMA on Si Wafers by Electron Beam Exposure
- A Stable High-Brightness Electron Gun with Zr/W-tip for Nanometer Lithography. : I. Emission Properties in Schottky- and Thermal Field-Emission Regions
- Direct Writing of Gratings by Electron Beam in Poly(metyl methacrylate) Optical Waveguides
- Change in Scanning Tunneling Microscope (STM) Tip Shape during Nanofabrication
- Focused Ion Beam Technology : Beam Induced Physics and Chemistry
- Focusing Characteristics of X-Ray Zone Plates Fabricated by Electron Beam Lithography and Reactive Ion Etching
- Maskless Submicrometer Pattern Formation of Cr Films by Focused Sb Ion Implantation
- Induced Defects in GaAs Etched by Low Energy Ions in Electron Beam Excited Plasma (EBEP) System
- Characteristics of Ion Beam Assisted Etching of GaAs Using Focused Ion Beam: Dependence on Gas Pressure
- Pulse Laser Annealing Effects in Si-Implanted GaAs
- The Enhanced and Suppressed Electroless Plating of Copper by UV-Irradiation : Chemistry (incl. physical process)
- Electrical Evaluation of Defects Induced in Silicon by High Energy Boron Ion Implantation
- Laser-Induced Etching of Mn–Zn Ferrite and Its Application
- Self-Development Properties of Nitrocellulose (Dependence on Ion Energies)
- Gamma-Radiolysis of Aqueous Boric Acid Solution
- Self-Development Properties of Nitrocellulose (Dependence on Ion Species)
- Characteristics of Be–Si–Au Ternary Alloy Liquid Metal Ion Sources