Laser-Induced Etching of Mn–Zn Ferrite and Its Application
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概要
- 論文の詳細を見る
Single-crystalline ferrite was masklessly etched by focused Ar+ laser irradiation in CCl4 gas and in H3PO4 solution. Etching rates up to 68 $\mu$m/s in CCl4 and 340 $\mu$m/s in H3PO4 have been achieved by laser processes. Bending of the etched narrow groove was observed in CCl4 gas due to the enhanced reflection caused by the polarization of the laser beam when focused by a microscope objective lens. A vertical slab structure with a high aspect ratio of up to 40 has been obtained by the light-guiding effect of the laser beam in wet-chemical etching. RBS analysis of the processed surface revealed that laser-induced damage was much lower than that induced by mechanical polishing.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-10-20
著者
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LU Yong
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University
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NAGATOMO Syohei
D. S. Scanner Co., Ltd.
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Minamisono Tadanori
Faculty of Science, Osaka University
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Takai Mikio
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
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Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
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Minamisono Tadanori
Faculty of Science, Osaka University, Toyonaka, Osaka 560
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Lu Yong
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560
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Takai Mikio
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560
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Nagatomo Syohei
D. S. Scanner Co. Ltd., Izumimachi, Higashiku, Osaka 540
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Namba Susumu
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560
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