Photolytic Etching of Polycrystalline Silicon in SF_6 Atmosphere
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概要
- 論文の詳細を見る
Photolytic etching of polycrystalline silicon has been investigated in an SF_6 atmosphere. SF_6 molecules were excited by one-photon absorption under D_2 lamp irradiation. This reaction was found to have high reaction-efficiency, 130 nm/Jcm^<-2>. The distribution of the etch rate in the sample was remarkably influenced by the gas flow. This reaction was thus caused by photo-excitation of SF_6 molecules in atmosphere, and not by that of absorbed SF_6 molecules over a polycrystalline silicon surface.
- 社団法人応用物理学会の論文
- 1986-11-20
著者
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Nakazato Norio
Mechanical Engineering Research Laboratory Hitachi L.t.d.
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WATANABE Seiichi
Mechanical Engineering Research Laboratory, Hitachi Ltd.
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Takai Mikio
Faculty Of Engineering Science Osaka University
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Takai Mikio
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
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UEDA Shinjirou
Mechanical Engineering Research Laboratory, HITACHI L.T.D.
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Watanabe Seiichi
Mechanical Engineering Research Laboratory Hitachi L.t.d.
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Ueda Shinjirou
Mechanical Engineering Research Laboratory Hitachi L.t.d.
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