Plasma Cleaning by Use of Hollow-Cathode Discharge in a CHF_3-SiO_2 Dry-Etching System

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概要

• 論文の詳細を見る

• Plasma cleaning by use of hollow-cathode discharge, where RF voltage was supplied with the same phase on both electrodes, was investigated in a CHF_3-SiO_2 parallel-plate-type dry-etching system. The plasma cleaning by use of the hollow-cathode discharge has achieved a high plasma-cleaning rate, because the electrons were confined by the opposite ion sheaths' electric field and high-density plasma was generated between the electrodes. With the heating of the reaction chamber wall, the plasma-cleaning rate was increased and the deposition rate of the plasma-polymer was decreased. The temperature of the reaction chamber wall was found to be one of the important paremeters affecting the etching characteristics, such as the SiO_2/poly-Si selectivity.

• 社団法人応用物理学会の論文
• 1992-05-15

著者

• Watanabe Seiichi

  Mechanical Engineering Research Laboratory Hitachi L.t.d.

• Watanabe Seiichi

  Mechanical Engineering Research Laboratory Hitachi Ltd.

関連論文

• Spatial Distribution and Transport of an Electron Cyclotron Resonance Plasma Generated Using Dominant-Mode Microwave
• Photolytic Etching of Polycrystalline Silicon in SF_6 Atmosphere
• Plasma Cleaning by Use of Hollow-Cathode Discharge in a CHF_3-SiO_2 Dry-Etching System
• Plasma Cleaning and Etching Using Quartz Bell Jar with SnO_2 Transparent Thin-Film Heater in CHF_3-SiO_2 Mocrowave Etching System

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