Atomic Sites of S on (NH_4)_2S_x-Treated GaAs(100) Surface
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-12-30
著者
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Andoh Hiroya
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
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YOKOI Naoki
Faculty of Engineering Science, and Research Center for Extreme Materials, Osaka University
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TAKETANI Masayuki
Faculty of Engineering Science, and Research Center for Extreme Materials, Osaka University
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TAKAI Mikio
Faculty of Engineering Science, and Research Center for Extreme Materials, Osaka University
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Takai Mikio
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
関連論文
- Atomic Sites of S on (NH_4)_2S_x-Treated GaAs(100) Surface
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- Soft-Error Study of DRAMs with Retrograde Well Structure by New Evaluation Method (Special Issue on Quarter Micron Si Device and Process Technologies)
- Charge Collection Control Using Retrograde Well Tested by Proton Microprobe Irradiation
- New Method for Soft-Error Mapping in Dynamic Random Access Memory Using Nuclear Microprobe
- Magnetic Analysis of Quadrupole Lens for MeV Ion Microprobe
- Three-Dimensional Analysis of Locally Implanted Atoms by MeV Helium Ion Microprobe
- Etching Rate Control by MeV O^+ Implantation for Laser-Chemical Reaction of Ferrite : Beam-Induced Physics and Chemistry
- Microbeam Line of MeV Heavy Ions for Materials Modification and In-Situ Analysis : Beam-Induced Physics and Chemistry
- Local Control of Magnetic Property in Stainless Steel Surface by Ion and Laser Beams : Beam-Induced Physics and Chemistry
- Microbeam Line of MeV Heavy Ions for Materials Modification and In-Situ Analysis
- Local Control of Magnetic Property in Stainless Steel Surface by Ion and Laser Beams
- Etching Rate Control by MeV O^+ Implantation for Laser-Chemical Reaction of Ferrite
- Laser-Induced Etching of Mn-Zn ferrite and Its Application : Etching and Deposition Technology
- Influence of Beam Current Ripple on Secondary Electron and RBS Mapping Images
- Damage during Microchanneling Analysis Using 400 keV Helium Ion Microprobe
- Residual Local Strain in Gallium Arsenide Induced by Laser Pyrolytic Etchingin CCl_4 Atmosphere
- Local Temperature Rise during Laser Induced Etching of Gallium Arsenide in SiCl_4 Atmosphere
- Maskless Dry Etching of Gallium Arsenide with a Submicron Line-Width by Laser Pyrolysis in CCl_4 Gas Atmosphere
- Laser Induced Local Etching of Gallium Arsenide in Gas Atmosphere
- Increase in T_c of Nb Films Implanted with N^+_2
- Control of T_c for Niobium by N Ion Implantation
- Residual Strain in Single Crystalline Germanium Islands on Insulator
- Thickness Dependence of SiO_2 Capping Layers on Recrystallization of Germanium Islands on Insulator
- Gallium Arsenide Layers Grown by Molecular Beam Epitaxy on Single Crystalline Germanium Islands on Insulator
- Single Crystalline Germanium Island on Insulator by Zone Melting Recrystallization
- Correction of Energy Shifts to Form Real Three-Dimensional Images by Microprobe RBS
- Design of a 200 kV Focused Ion Beam Surface Analysis System
- Stoichiometric Change in Gallium Arsenide after Laser-Induced Thermochemical Etching
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- Change in Scanning Tunneling Microscope (STM) Tip Shape during Nanofabrication
- Maskless Submicrometer Pattern Formation of Cr Films by Focused Sb Ion Implantation
- Photolytic Etching of Polycrystalline Silicon in SF_6 Atmosphere
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- Electrical Evaluation of Defects Induced in Silicon by High Energy Boron Ion Implantation
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